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onsemi N-Channel Power MOSFET, 3A, 60V, Enhancement Mode, SOT-223, 4-Pin, Surface Mount NTF3055L108T1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.57mm
Length 6.5mm
Model NTF3055L108T1G
Width 3.5mm
Mount Type Surface
Series NTF3055L108
Maximum Operating Temperature 175°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type N
Maximum Continuous Drain Current Id 3A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.1W
Typical Gate Charge Qg @ Vgs 7.6nC
Maximum Gate Source Voltage Vgs 15V
Forward Voltage Vf -1.2V
Gate Charge 7.6 nC

Key Features

  • N-channel enhancement mode MOSFET suitable for power switching.
  • Maximum continuous drain current of 3A ensures reliable operation under moderate loads.
  • Drain-source voltage rated up to 60V for flexible circuit integration.
  • Low drain-source resistance of 120mΩ minimizes power loss.
  • Operating temperature range from -55°C to 175°C for broad environmental compatibility.
  • Compact SOT-223 package enables efficient PCB layout.
  • 4-pin configuration supports standard surface mount assembly.
  • Compliant with AEC-Q101 automotive standard for enhanced reliability.

Product Description

The onsemi NTF3055L108T1G N-Channel MOSFET is a robust semiconductor device engineered for efficient switching and amplification in electronic circuits. Featuring an enhancement mode channel, it supports a maximum drain current of 3A and operates with a drain-source voltage of up to 60V. Its low drain-source resistance of 120 milliohms contributes to high efficiency and minimal heat generation, making it well-suited for a variety of power management and motor control applications.

This MOSFET is housed in a compact SOT-223 surface mount package, with a four-pin configuration that enables easy integration into PCBs. The device is designed to withstand challenging environments, thanks to its wide operating temperature range from -55°C to 175°C. It is compliant with AEC-Q101 automotive standards, ensuring high reliability and performance in automotive and industrial settings.

The NTF3055L108T1G features a typical gate charge of 7.6nC at Vgs, and a maximum gate-source voltage rating of 15V. Forward voltage is specified at -1.2V, supporting efficient switching characteristics. Its power dissipation capacity is rated at 2.1W, with surface-mount construction simplifying assembly in high-density electronic designs. Combined with a height of 1.57mm, length of 6.5mm, and width of 3.5mm, the device is ideal where space savings are critical.

Typical applications include DC-DC conversion, motor drive, load switching, and signal amplification in industrial, automotive, consumer electronics, and IoT environments. Engineers value its reliability, compact form, and high operating range for both prototyping and production-scale deployments. The device is also suitable for PCB assembly requiring efficiency in heat dissipation and footprint conservation.

N-channel enhancement mode MOSFET designed for power and signal applications. Maximum drain current of 3A and 60V drain-source voltage rating. SOT-223 package with four pins, suitable for surface mounting. Low Rds(on) for energy efficiency and reduced heat dissipation.

Wide operating temperature range from -55°C to 175°C provides versatility. Automotive grade AEC-Q101 compliance ensures reliability in harsh environments. Compact size helps with high-density circuit board layouts. Suitable for use in DC-DC converters, motor drivers, and general load control circuits.

Explore more MOSFETs and advanced semiconductor solutions in the EnvMart Electronics & Electricals category, or browse onsemi’s portfolio for automotive and industrial-grade components.

onsemi N-Channel Power MOSFET, 3A, 60V, Enhancement Mode, SOT-223, 4-Pin, Surface Mount NTF3055L108T1G
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Frequently Asked Questions

The maximum continuous drain current for the NTF3055L108T1G is 3A.

This MOSFET has a drain-source voltage rating of up to 60V.

The NTF3055L108T1G features a low drain-source resistance of 120mΩ.

The operating temperature range for this model is from -55°C to 175°C.

This MOSFET is housed in a SOT-223 package with a 4-pin configuration.

The NTF3055L108T1G is compliant with the AEC-Q101 automotive standard.

It has a maximum power dissipation capacity rated at 2.1W.

The typical gate charge at Vgs is 7.6nC.

The forward voltage for this MOSFET is specified at -1.2V.

The dimensions of the NTF3055L108T1G are 1.57mm in height, 6.5mm in length, and 3.5mm in width.

This model is suitable for applications such as DC-DC conversion, motor drive, load switching, and signal amplification.

The maximum gate-source voltage rating for the NTF3055L108T1G is 15V.

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