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Vishay N-Channel MOSFET, 8A, 500V, Enhancement, 3-Pin TO-220 IRF840LCPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF840LCPBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF840LC |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 39nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 2V |
| N-Channel MOSFET Transistor, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840LBrand | Vishay |
| N-Channel MOSFET Transistor, 8 A, 500 V, 3-Pin TO-220AB Fairchild IRF840BBrand | Fairchild Semiconductor |
Key Features
- Operates as a high-performance N-channel enhancement MOSFET supporting a maximum drain current of 8A.
- Withstands a high drain-source voltage up to 500V, suitable for power switching applications.
- Comes in a TO-220 package with three pins for through-hole mounting, ideal for PCB integration.
- Provides low drain-source resistance at 850mΩ for efficient switching and reduced power loss.
- Features a gate-source voltage maximum of 30V for reliable control and triggering.
- Handles power dissipation up to 125W, making it robust for demanding usage.
- Functions in a wide temperature range from -55°C to 150°C for reliable operation in various environments.
- Enhancement channel mode ensures normally-off behavior until a gate voltage is applied.
Product Description
The Vishay IRF840LCPBF is a high-quality N-channel MOSFET designed for industrial, power electronics, and motor control applications, where reliable high-voltage switching is essential. Equipped to handle a maximum drain current of 8A and a maximum drain-source voltage of 500V, this transistor is well-suited for switching circuits, power management, and inverter systems.
The component is constructed in the TO-220 package format, featuring three pins and through-hole mounting for straightforward integration with printed circuit boards and other assemblies. Its enhancement mode means the device remains off until a positive voltage is applied to the gate terminal, ensuring safe operation and energy conservation in standby mode.
With a maximum drain-source resistance (Rds) of 850mΩ, the IRF840LCPBF offers efficient switching performance and minimal conduction losses. The device tolerates power dissipation up to 125W, enabling use in high-demand environments such as motor drives, uninterruptible power supplies (UPS), LED lighting systems, and high-voltage DC-DC converters.
The gate-source voltage is rated for a maximum of 30V, providing flexibility in control circuits and compatibility with a range of digital or analog drivers. The MOSFET’s gate charge is typically 39nC at the rated voltage, making it responsive while still manageable for common driver ICs. Forward voltage drop is 2V, facilitating reliable switching and output characteristics.
Its robust thermal characteristics allow operation between -55°C and 150°C, suitable for harsh and demanding industrial settings such as manufacturing automation, renewable energy systems, HVAC controls, and laboratory instrumentation.
Mounting is achieved via through-hole technology, and the device does not meet automotive standard certification, focusing it on commercial and industrial uses. Country of origin is China as specified in the source evidence.
The IRF840LCPBF is used in general industrial power electronics, laboratory setups, manufacturing, and construction electronics for efficient, high-voltage switching solutions. Browse other Vishay MOSFETs and similar N-channel devices in the MOSFET category on EnvMart for further application needs.
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Frequently Asked Questions
This model supports a maximum drain current of 8A.
It can withstand a maximum drain-source voltage of 500V.
The MOSFET comes in a TO-220 package, which features three pins for through-hole mounting.
It can handle power dissipation up to 125W, making it suitable for demanding applications.
The typical gate charge at the rated voltage is 39nC.
The maximum gate-source voltage is rated at 30V.
It has a maximum drain-source resistance of 850mΩ, which supports efficient switching.
This model operates reliably in a temperature range from -55°C to 150°C.
It utilizes through-hole mounting technology for easy integration with PCBs.
This MOSFET is designed for industrial power electronics, motor control, and power management applications.
The forward voltage drop is specified at 2V, which aids in reliable switching.
The country of origin for this model is China.
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