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IXYS HiperFET Polar N-Channel MOSFET 24A 800V 3-Pin TO-247 Enhancement IXFH24N80P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 21.46mm |
| Length | 16.26mm |
| Model | IXFH24N80P |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 650W |
| Typical Gate Charge Qg @ Vgs | 105nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- N-channel enhancement mode MOSFET designed for high power applications.
- Maximum continuous drain current of 24A delivers strong current handling.
- Maximum drain-source voltage of 800V supports high voltage circuits.
- Low drain-source resistance at 400mΩ improves efficiency and reduces heat loss.
- TO-247 package with 3 pins enables easy mounting and integration on PCBs.
- Maximum power dissipation of 650W suitable for demanding environments.
- Gate-source voltage up to 30V and gate charge of 105nC.
- Operating temperature range from -55°C to 150°C provides resilience in variable conditions.
Product Description
The IXYS IXFH24N80P HiperFET Polar N-Channel MOSFET is engineered for industrial and high-power electronics where robust switching and high efficiency are required. With a drain current of 24A and a maximum drain-source voltage of 800V, this MOSFET is ideal for advanced power conversion, motor drive, inverter, and power supply systems. The device features a TO-247 package with three pins, allowing for easy through-hole mounting and integration into high-density PCB layouts.
This enhancement mode MOSFET operates with fast intrinsic diode technology (HiPerFET), ensuring rapid switching performance and minimizing losses during operation. The low drain-source resistance of 400mΩ maximizes efficiency, and the 650W power dissipation rating ensures reliability in demanding applications such as industrial automation, renewable energy, and motor controllers. The gate-source voltage tolerance up to 30V and a typical gate charge of 105nC allow flexible circuit design for both analog and digital control systems.
Designed with an operating temperature range from -55°C to 150°C, the IXFH24N80P provides resilience and stability across a wide environmental spectrum. The forward voltage of 1.5V and the through-hole mount enable easy assembly and maintenance. Applications span industrial, laboratory, manufacturing, and high-power commercial equipment, making this MOSFET suitable for scenarios requiring rapid switching, reliability, and high power handling.
The device belongs to the HiperFET Polar series and is constructed for both production and standard packaging, providing flexibility for volume and prototyping orders. Additional package specifications include height of 21.46mm, length 16.26mm, and width 5.3mm, fitting standard TO-247 form factor. Automotive standard compliance is not indicated, aligning the product with general industrial and electronic use rather than automotive-specific standards.
Engineers and designers seeking reliable power control in complex circuit architectures will benefit from the IXYS HiperFET Polar N-Channel MOSFET IXFH24N80P. For more MOSFETs and advanced semiconductor solutions, browse the complete selection in the Semiconductor and MOSFET categories on EnvMart.
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Frequently Asked Questions
The IXFH24N80P has a maximum continuous drain current of 24A, making it suitable for high power applications.
This model supports a maximum drain-source voltage of 800V, allowing it to operate in high voltage circuits.
The drain-source resistance of this MOSFET is 400mΩ, which helps improve efficiency and reduce heat loss during operation.
It has a maximum power dissipation rating of 650W, making it suitable for demanding environments.
The IXFH24N80P can tolerate a maximum gate-source voltage of 30V, which provides flexibility in circuit design.
The TO-247 package has dimensions of 21.46mm in height, 16.26mm in length, and 5.3mm in width.
The operating temperature range for the IXFH24N80P is from -55°C to 150°C, allowing it to function in various environmental conditions.
This model utilizes a through-hole mounting type, facilitating easy integration into PCB layouts.
The typical gate charge for this MOSFET is 105nC, which is relevant for both analog and digital control systems.
The IXFH24N80P belongs to the HiperFET Polar series, designed for high power applications.
The forward voltage of the IXFH24N80P is 1.5V, which is important for its operation in circuits.
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