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IXYS HiperFET Polar Type N-Channel MOSFET 110A 100V TO-247 Through Hole IXFH110N10P

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IXYS HiperFET Polar Type N-Channel MOSFET 110A 100V TO-247 Through Hole IXFH110N10P

Name: IXYS HiperFET Polar Type N-Channel MOSFET 110A 100V TO-247 Through Hole IXFH110N10P
Brand: IXYS
SKU: 85285

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Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	21.46mm
Length	16.26mm
Model	IXFH110N10P
Width	5.3mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	175°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	110A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	15mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	480W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.5V

Key Features

110 A maximum continuous drain current ensures reliable performance in high-power circuits.
100 V maximum drain source voltage suitable for industrial and electronic applications.
Low drain source resistance of 15 mΩ for efficient current handling.
TO-247 package enables robust through hole mounting, ideal for PCB integration.
Wide operating temperature range from -55°C to 175°C allows use in harsh environments.
Enhancement mode channel improves switching efficiency and control.
3-pin configuration simplifies design and installation.
Maximum power dissipation of 480 W supports high-load operation.

Product Description

IXYS IXFH110N10P is a HiperFET Polar Type N-Channel MOSFET designed to deliver outstanding performance in demanding industrial, electronic, and power applications. Its high maximum continuous drain current of 110 A and maximum drain source voltage of 100 V make it suitable for systems requiring robust power switching and control. The device uses an enhancement mode channel, offering improved switching efficiency for modern power conversion environments.

This MOSFET is housed in a TO-247 package with a through hole mounting configuration, ensuring secure placement on printed circuit boards and long-term reliability in commercial and industrial installations. The low drain source resistance of 15 mΩ enhances the current handling capability while minimizing losses, supporting energy-efficient operation. With a maximum power dissipation of 480 W, the IXFH110N10P is ideal for high-load applications such as motor drives, power supplies, and inverter circuitry.

A wide operating temperature range from -55°C to 175°C allows this MOSFET to operate reliably even in harsh and variable environmental conditions. The 3-pin configuration simplifies integration into typical electronic designs, while the typical gate charge of 110 nC ensures rapid response for switching operations. The maximum gate source voltage of 20 V increases flexibility and stability within control systems. Forward voltage of 1.5 V supports efficient diode operation.

With its advanced Polar HiperFET Series design, the IXFH110N10P features fast intrinsic diode characteristics and is optimized for applications requiring high reliability and performance under challenging operational conditions. It's suitable for use in industrial automation, laboratory instrumentation, renewable energy, motor control, and other environments where robust MOSFET performance is critical.

Applications include industrial inverter systems, power conversion, UPS, automotive electronics (non-standard), industrial controls, and laboratory equipment. Browse additional MOSFETs and advanced power semiconductors in the Electronics & Electricals | Semiconductor | MOSFETs category for further solutions to your requirements.