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Vishay N-Channel Power MOSFET 41A, 600V, TO-220, Fast Body Diode, SiHP068N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.24mm |
| Length | 27.69mm |
| Model | SIHP068N60EF-GE3 |
| Width | 9.96mm |
| Mount Type | Through Hole |
| Series | SiHP068N60EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 41A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 68mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Rated for 41A continuous drain current with maximum voltage of 600V.
- TO-220 package optimizes thermal management and compact PCB mounting.
- Enhancement-mode design with low Rds(on) for reduced conduction losses.
- Fourth-generation EF Series E technology featuring a fast integrated body diode.
- Supports through-hole mounting; three-pin configuration for straightforward integration.
- Wide operating temperature range from minus 55°C to 150°C.
- Ideally suited for industrial power supplies, motor drives, and commercial inverter circuits.
- Maximum power dissipation of 250W enables use in high-power environments.
Product Description
The Vishay SIHP068N60EF-GE3 is a high-performance N-Channel enhancement-mode Power MOSFET, engineered for advanced industrial, commercial, and energy applications. Featuring a robust TO-220 package and fourth-generation E series fast body diode technology, this MOSFET provides reliable switching with reduced conduction and switching losses.
With a 41A continuous drain current and a maximum drain-to-source voltage of 600V, the SIHP068N60EF-GE3 supports both high currents and substantial voltage withstand. The low Rds(on) (68mΩ max) ensures minimized power dissipation, contributing to greater system efficiency. Its enhancement-mode channel is optimized for easy drive with a maximum gate-source voltage of 30V and typical gate charge of 51nC.
Engineered for through-hole mounting, the TO-220 package and three-pin configuration facilitate straightforward PCB design and effective thermal dissipation. Wide temperature support from -55°C to 150°C ensures operation under rigorous thermal conditions. The fast body diode enables quick switching - ideal for inverter circuits, industrial motor drives, high-efficiency power supplies, and other demanding electronics.
The device offers a maximum power dissipation rating of 250W, providing robust tolerance for power-intensive tasks. Additional specifications include forward voltage of 1.2V and compact package dimensions (4.24mm height, 27.69mm length, 9.96mm width). The SIHP068N60EF-GE3 belongs to the EF Series, offering low Figure-of-Merit (Ron x Qg), and is avalanche energy rated (UIS), making it suitable for circuits requiring increased reliability and safety.
Common industrial use cases include power conversion, motor control, renewable energy systems, and commercial-grade electronics. Its design and certifications provide compatibility for applications in demanding environments - HVAC, manufacturing, laboratory instrumentation, and process automation.
41A continuous drain current supports high-power switching. 600V drain-source voltage ensures compatibility with high-voltage circuits. Fourth-generation E series technology for improved efficiency. TO-220 package for optimal thermal management and easy mounting.
Wide temperature operation increases versatility and reliability. Fast body diode with avalanche energy rating for safety and performance.
Explore Vishay’s extensive portfolio of power semiconductors and MOSFETs for tailored solutions across industrial, laboratory, and commercial applications. Browse additional categories for discrete semiconductor components on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 41A.
It has a maximum drain-source voltage rating of 600V.
This model comes in a TO-220 package type, which is designed for through-hole mounting.
The maximum power dissipation rating is 250W, allowing it to operate in high-power environments.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance (Rds(on)) is 68mΩ, which helps minimize power dissipation.
The typical gate charge (Qg) at a gate-source voltage (Vgs) is 51nC.
The forward voltage rating of the integrated body diode is 1.2V.
This model has a three-pin configuration, facilitating straightforward integration into circuits.
It features an enhancement-mode N-channel design.
This MOSFET is ideally suited for industrial power supplies, motor drives, and commercial inverter circuits.
It utilizes fourth-generation EF Series E technology, which provides improved efficiency and reduced conduction losses.
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