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Vishay Siliconix TrenchFET N-Channel MOSFET, 2A, 60V, SOT-23, Surface Mount, SQ2364EES-T1_GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay Siliconix |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SQ2364EES-T1_GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 2nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | 1.2V |
Key Features
- TrenchFET N-channel MOSFET designed for high efficiency and low loss switching.
- Supports maximum continuous drain current of 2A at 60V drain-source voltage.
- Features a compact 3-pin SOT-23 surface mount package suitable for automated assembly.
- Operates in enhancement mode for improved control and performance stability.
- Offers low drain-source resistance for optimal conduction and reduced heat generation.
- Wide operating temperature range from -55°C to 175°C ensures reliability in demanding conditions.
- Ideal for automotive, industrial, and power electronics applications.
Product Description
Vishay Siliconix SQ2364EES-T1_GE3 is a TrenchFET N-channel MOSFET engineered for surface mount use in demanding automotive and industrial electronics.
This MOSFET provides a maximum continuous drain current of 2A and supports up to 60V drain-source voltage, making it suitable for power management, switching, and load control applications. The enhancement channel mode ensures efficient control characteristics, while the TrenchFET design delivers low switching and conduction losses for optimal energy savings.
Packed in a compact SOT-23 3-pin package, the SQ2364EES-T1_GE3 is ideal for automated PCB assembly and offers robust performance in a wide range of temperature environments, from -55°C to 175°C. Its low maximum drain-source resistance enhances conductor efficiency and reduces thermal output, extending component life and reliability.
The MOSFET features a maximum gate-source voltage of 8V and a forward voltage of 1.2V. Its typical gate charge of 2nC at Vgs contributes to fast switching and precise control. The device follows automotive AEC-Q101 standards for quality and reliability in automotive environments.
Additional technical highlights include a maximum power dissipation of 3W, minimal physical footprint (height 1.02 mm, length 3.04 mm, width 1.4 mm), and surface mount capability for streamlined production. Fully lead-free and halogen-free construction ensures compliance with environmental regulations and long operational life.
TrenchFET N-channel design for high performance and efficiency. 2A continuous drain current; 60V drain-source voltage capability. SOT-23 package and surface mount for modern PCB layouts. Wide operating range from -55°C to 175°C for versatile use cases.
Low drain-source resistance and fast switching gate charge. Automotive-grade quality (AEC-Q101 standard) for reliable operation.
Common applications include automotive power circuits, motor drivers, DC-DC converters, industrial switching, and portable electronics. This MOSFET is preferred in environments where space, efficiency, and robust thermal performance are critical.
For further product exploration, browse Vishay Siliconix's complete MOSFET portfolio on EnvMart or explore related semiconductor categories.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2A.
This MOSFET supports a maximum drain-source voltage of 60V.
It comes in a compact SOT-23 package suitable for surface mounting.
The operating temperature range is from -55°C to 175°C.
The maximum power dissipation for this unit is 3W.
The typical gate charge at Vgs is 2nC.
The maximum gate-source voltage is 8V.
The maximum drain-source resistance is 600mΩ.
This model complies with the AEC-Q101 automotive standard.
The SOT-23 package has 3 pins.
It is suitable for automotive power circuits, motor drivers, DC-DC converters, and industrial switching applications.
The country of origin for this model is China.
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