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Toshiba N-Channel Enhancement MOSFET, 20 A Drain Current, 40 V Drain Source Voltage, 8-Pin SOP Package TPCA8052-H
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.95mm |
| Length | 5mm |
| Model | TPCA8052-H |
| Width | 5mm |
| Mount Type | Surface |
| Series | TPC |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 13.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a low maximum drain-source resistance of 13.1mΩ for efficient conduction.
- Supports a maximum power dissipation of 30W, suitable for moderate power applications.
- Capable of operating at temperatures up to 150°C ensuring reliability.
- Includes a typical gate charge of 25nC at Vgs for fast switching performance.
- Designed with a maximum gate-source voltage rating of -20V to +20V.
- Compact dimensions with 5mm length, 5mm width, and 0.95mm height for surface mount applications.
- Ideal for electronic and power management in industrial and commercial equipment.
Product Description
Toshiba TPCA8052-H N-Channel Enhancement MOSFET provides robust performance with a maximum continuous drain current of 20A and a drain-source voltage rating of 40V, delivered in an 8-pin SOP surface mount package designed for efficient PCB integration.
This MOSFET features a low maximum drain-source resistance of 13.1 milliohms, enabling high efficiency and reduced power loss in switching and amplification circuits. It supports a maximum power dissipation of 30 watts, making it suitable for moderate power regulation and control tasks in electronic devices.
The device is capable of operating reliably up to 150°C, ensuring durability under demanding thermal conditions often encountered in industrial, automotive, and power management applications.
The typical gate charge at gate-source voltage is 25 nanocoulombs, facilitating fast switching operation, critical for PWM controllers and power converters. It is designed to handle gate-source voltages from -20V to +20V, offering good tolerance and protection margin.
With compact physical dimensions of 5mm length, 5mm width, and 0.95mm height, this SOP-packaged MOSFET is optimized for space-constrained PCB layouts in consumer electronics, industrial controllers, and power supplies.
Low drain-source resistance for enhanced conduction efficiency. High maximum power dissipation for reliable performance. Wide operating temperature range for industrial use. Fast switching due to low gate charge. High gate-source voltage tolerance for robust operation.
Compact SOP surface mount package for easy PCB integration.
This component is widely utilized in semiconductor discrete components applications including power management, DC-DC converters, motor controllers, and switching regulators in industrial, commercial, and automotive fields.
Explore more discrete semiconductor components and MOSFET solutions from Toshiba and other leading brands on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20A.
The maximum drain-source voltage rating is 40V.
This MOSFET has dimensions of 5mm in length, 5mm in width, and 0.95mm in height.
The maximum power dissipation is 30W, making it suitable for moderate power applications.
The typical gate charge at gate-source voltage is 25nC.
The maximum gate-source voltage rating is -20V to +20V.
This model can operate reliably at temperatures up to 150°C.
It comes in an 8-pin SOP surface mount package.
The maximum drain-source resistance is 13.1mΩ, which enhances conduction efficiency.
This MOSFET is suitable for power management, DC-DC converters, motor controllers, and switching regulators in various industrial and commercial applications.
The channel type of this model is N-channel enhancement.
The mount type for this MOSFET is surface mount.
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