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onsemi Darlington Transistor NPN, 800 mA, 80 V, HFE 10000, 3-Pin SOT-23 MMBTA28
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.02mm |
| Length | 2.51mm |
| Model | MMBTA28 |
| Mount Type | Surface |
| Series | PZTA28 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 800mA |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 10000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 12V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.2V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 100nA |
| Maximum Power Dissipation Pd | 350mW |
| Nexperia BCV47,215 1 Darlington Transistor NPN, 500 mA 60 V HFE | 2000, 3-Pin SOT-23Brand: Nexperia |
| onsemi 1 Darlington Transistor NPN, 800 mA 80 V HFE | 10000, 3-Pin SOT-23 |
Key Features
- Equipped with a 3-pin SOT-23 surface-mount package for compact mounting.
- Operates efficiently within a temperature range from -55°C to 150°C.
- Maximum power dissipation rated at 350 mW ensures robust performance.
- Designed with a maximum collector cut-off current of 100 nA for low leakage.
- Transistor polarity is NPN, suitable for high gain applications.
- Minimum emitter-base voltage of 12 V offers reliable switching.
- Maximum collector-emitter saturation voltage of 1.2 V enhances switching efficiency.
Product Description
onsemi MMBTA28 is a Darlington NPN transistor featuring a maximum continuous collector current of 800 mA and a collector-emitter voltage rated at 80 V. It provides a very high minimum DC current gain (hFE) of 10000, ensuring amplified signal performance in various electronic circuits.
This transistor is housed in a compact SOT-23 3-pin surface-mount package, optimizing space for modern electronic board designs. It is suitable for applications requiring high gain and low saturation voltage, making it ideal for switching and amplification tasks.
The device withstands operating temperatures from -55°C up to 150°C, supporting reliable operation in industrial and commercial conditions. The maximum power dissipation of 350 mW ensures efficient thermal management for enhanced device longevity.
With a maximum collector cut-off current of 100 nA and maximum emitter-base voltage of 12 V, the MMBTA28 transistor maintains low leakage and high safety margins. Its maximum collector-emitter saturation voltage of 1.2 V contributes to minimal power loss during switching.
Compact SOT-23 3-pin package optimized for surface mounting. High gain transistor with a minimum DC current gain of 10000. Operating temperature range of -55°C to 150°C for harsh environments. Maximum continuous collector current of 800 mA for moderate power applications.
Low leakage current design with 100 nA maximum collector cut-off current. Designed for efficient switching, saturation voltage capped at 1.2 V. Power dissipation up to 350 mW supports durability.
This transistor is widely used in power amplification, switching circuits, and general-purpose electronic designs across industrial control, consumer electronics, and telecommunications sectors. Its reliability under varied temperature ranges and high current gain factors makes it a versatile component in discrete semiconductor applications.
Explore the range of Darlington Transistors in our Electronics & Electricals category for various specifications and configurations.
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Frequently Asked Questions
The MMBTA28 has a maximum continuous collector current of 800 mA.
This model is rated for a maximum collector-emitter voltage of 80 V.
It features a minimum DC current gain (hFE) of 10000, ensuring effective amplification.
The maximum power dissipation for the MMBTA28 is rated at 350 mW.
It operates efficiently within a temperature range from -55°C to 150°C.
This transistor is housed in a compact SOT-23 3-pin surface-mount package.
The maximum collector cut-off current for the MMBTA28 is 100 nA, which helps maintain low leakage.
The maximum emitter-base voltage (VEBO) is 12 V.
The maximum collector-emitter saturation voltage (VceSAT) is capped at 1.2 V, enhancing switching efficiency.
The MMBTA28 measures 1.02 mm in height and 2.51 mm in length.
The MMBTA28 has an NPN transistor polarity, making it suitable for high gain applications.
It is widely used in power amplification, switching circuits, and general-purpose electronic designs across various sectors.
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