onsemi N-Channel MOSFET, 59 A, 40 V Enhancement Mode, 4-Pin TO-252 Package NVD5C464NT4G

onsemi NVD5C464NT4G is a high-performance N-Channel MOSFET designed for advanced power switching applications. This 4-pin TO-252 package device delivers a maximum continuous drain current of 59 A and a maximum drain-source voltage of 40 V, enabling efficient conduction and switching performance in various electronic circuits.

The MOSFET utilizes enhancement-mode channel technology with a low maximum drain-source resistance of 5.8 milliohms, significantly reducing conduction losses and improving power efficiency. Its typical gate charge of 20 nanocoulombs enhances switching speeds, making it suitable for high-frequency operation.

Engineered for durability, the device operates over a wide temperature range from -55 degrees Celsius up to 175 degrees Celsius. The inclusion of the automotive AEC-Q101 certification ensures reliability for automotive electronics and other industrial applications.

This transistor's compact TO-252 surface mount package measures 6.73 mm in length, 6.22 mm in width, and 2.25 mm in height, facilitating integration into dense printed circuit boards while maintaining thermal dissipation efficiency. The device features a maximum power dissipation rating of 40 W and withstands a maximum gate-to-source voltage of ±20 V to protect against voltage spikes.

High maximum continuous drain current of 59 amperes ensures robust power handling. 40 volts maximum drain-source voltage suits various electronic applications. Low on-resistance of 5.8 milliohms minimizes conduction losses.

Surface mount TO-252 package with four pins supports reliable PCB integration. Enhanced switching due to low typical gate charge of 20 nanocoulombs. Wide operating temperature range from -55 °C to 175 °C provides durability in harsh environments.

Compliant with automotive standard AEC-Q101 for automotive-grade reliability. Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.25 mm for space-saving designs.

This MOSFET suits industrial power management, automotive electronics, power conversion systems, and general purpose switching applications. Its design benefits include minimized conduction and switching losses, exceptional thermal performance, and capacity to handle high currents within compact footprints. OEMs and system integrators can deploy this device to achieve miniaturization and efficiency enhancements in power electronic assemblies.

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