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Infineon N-Channel MOSFET 40 A 100 V Enhancement Mode 8-Pin TSDSON BSZ097N10NS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ097N10NS5ATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | BSZ097N10NS5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 13mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Designed with enhancement mode channel for efficient switching performance.
- 8-pin TSDSON surface mount package for compact device integration.
- Maximum drain-source resistance of 13 milliohms ensuring low conduction losses.
- Capable of handling maximum power dissipation of 69 watts for robust operation.
- Operating temperature range from -55°C to 150°C supports industrial environments.
- Optimized typical gate charge of 22 nanoCoulombs for fast switching applications.
- Maximum gate-source voltage rating of 20 volts provides reliable input protection.
- Compact device dimensions of 3.4 mm length, 3.4 mm width, and 1.1 mm height.
Product Description
Infineon BSZ097N10NS5ATMA1 is an advanced N-Channel MOSFET designed for reliable and efficient power management. It supports a maximum continuous drain current of 40 A and withstands drain-source voltages up to 100 V, making it suitable for demanding power switching applications.
Featuring enhancement mode channel technology and housed in an 8-pin TSDSON surface mount package, this MOSFET offers low resistance with a maximum Rds(on) of 13 milliohms to minimize conduction losses and maximize system efficiency.
The device can dissipate up to 69 W of power and operates across a broad temperature range from -55 °C to 150 °C, ensuring durability and stable performance in harsh industrial and automotive environments.
With a typical gate charge of 22 nC and a forward voltage of 900 mV, the BSZ097N10NS5ATMA1 delivers fast switching capabilities and reduced power loss. Its compact form factor of 3.4 mm by 3.4 mm by 1.1 mm supports high-density PCB layouts.
This MOSFET is optimized for synchronous rectification applications in telecommunications, server power supplies, solar power systems, low voltage drives, light electric vehicles, and adapters. It enables higher system efficiency by reducing switching and conduction losses while enhancing power density.
Enhancement mode N-Channel for efficient switching performance. Compact 8-pin TSDSON surface mount package. Low Rds(on) of 13 milliohms minimizes conduction losses. High maximum power dissipation of 69 watts. Wide operating temperature range from -55 to 150 °C.
Optimized typical gate charge for fast switching. Maximum gate-source voltage of 20 volts. Compact device dimensions for high-density applications. Forward voltage rating supports efficient conduction. Ideal for telecom, server, solar, and industrial applications.
Discover the range of Infineon MOSFETs on EnvMart to find cutting-edge semiconductor solutions tailored for power efficiency and industrial reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
It can withstand a maximum drain-source voltage of 100 V.
The maximum drain-source resistance (Rds(on)) is 13 milliohms.
This MOSFET can handle a maximum power dissipation of 69 watts.
The operating temperature range is from -55°C to 150°C.
The dimensions are 3.4 mm in length, 3.4 mm in width, and 1.1 mm in height.
It comes in an 8-pin TSDSON surface mount package.
The typical gate charge is 22 nanoCoulombs (nC).
The maximum gate-source voltage rating is 20 volts.
It is optimized for synchronous rectification applications in telecommunications, server power supplies, solar power systems, and low voltage drives.
The forward voltage rating is 900 mV.
This model uses an N-channel type for efficient switching performance.
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