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Nexperia Type P-Channel MOSFET 13.7 A 20 V Enhancement Mode 8-Pin MLPAK33 PXP018-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP018-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.7A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This enhancement mode MOSFET uses Trench technology for low threshold voltage and efficient operation.
- Maximum continuous drain current is rated at 13.7 amperes.
- Drain-source voltage rating is 20 volts, suitable for low voltage power applications.
- The device supports a maximum power dissipation of 81 watts.
- Operating temperature ranges from -55°C to a maximum of 175°C.
- Built in a compact surface mount MLPAK33 (SOT8002) plastic package with 8 pins.
- Maximum gate-source voltage is 20 volts to ensure safe operation within limits.
- Low drain-source resistance of 13.6 milliohms facilitates efficient conduction.
Product Description
Nexperia PXP018-20QXJ is a Type P-Channel enhancement mode MOSFET designed using Trench MOSFET technology, housed in an 8-pin MLPAK33 surface-mounted plastic package (SOT8002).
This transistor supports a maximum continuous drain current of 13.7 amperes and can handle a drain-source voltage of 20 volts, making it ideal for various power management applications.
The maximum power dissipation is rated at 81 watts, with operational temperature range from -55°C to 175°C, ensuring reliability in demanding environments. The device exhibits a low drain-source on resistance of 13.6 milliohms, improving efficiency in switching circuits.
Maximum gate-source voltage is limited to 20 volts, ensuring robust switching control and safety margins. Typical applications include high-side load switching, battery management systems, DC-to-DC voltage converters, and switching circuits in consumer and industrial electronics.
This MOSFET utilizes Trench technology for low threshold voltage operation. The compact MLPAK33 package type is optimized for surface mount assembly. Low on-resistance supports efficient power handling. Wide operating temperature range supports harsh industrial and automotive environments.
Suitable for use in power conversion and load switching applications in industrial, automotive, and electronics manufacturing sectors. Compliance with RoHS and standard safety requirements is met, although no specific automotive standards apply to this model.
Explore the Nexperia MOSFET series within the Electronics & Electricals category at EnvMart for complementary and related semiconductor devices.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is rated at 13.7 amperes.
This MOSFET has a maximum drain-source voltage rating of 20 volts.
It supports a maximum power dissipation of 81 watts.
The operating temperature range is from -55°C to a maximum of 175°C.
This model is housed in a compact surface mount MLPAK33 (SOT8002) plastic package with 8 pins.
The drain-source on-resistance is 13.6 milliohms, which facilitates efficient conduction.
The maximum gate-source voltage is limited to 20 volts to ensure safe operation.
This device is a Type P-Channel enhancement mode MOSFET.
Typical applications include high-side load switching, battery management systems, and DC-to-DC voltage converters.
The country of origin for this MOSFET is India.
It utilizes Trench technology for low threshold voltage and efficient operation.
The MLPAK33 package has 8 pins.
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