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DiodesZetex N-Channel MOSFET 4 A, 30 V Enhancement Mode, 3-Pin SOT-23 DMG3418L-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMG3418L-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMG3418L |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 5.5nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 0.8V |
Key Features
- The MOSFET operates in enhancement mode for efficient switching.
- Maximum drain-source resistance is low at 150 milliohms.
- It provides a maximum power dissipation of 1.4 watts ensuring reliable operation.
- Typical gate charge is 5.5 nanocoulombs for fast switching capability.
- Suitable for surface mount technology with 3-pin SOT-23 packaging.
- Operating temperature range extends from -55°C to 150°C for varied environments.
- Includes automotive AEC-Q101 standard qualification for automotive reliability.
- Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height for space-constrained designs.
Product Description
DiodesZetex DMG3418L-7 is a high-performance N-Channel MOSFET designed for switching applications with a continuous drain current rating of 4 amps and a maximum drain-source voltage of 30 volts. Packaged in a compact 3-pin SOT-23 surface mount package, this enhancement mode MOSFET provides efficient power handling with a low maximum on-resistance of 150 milliohms, helping reduce losses and improve circuit efficiency.
The device features a maximum power dissipation of 1.4 watts and a typical gate charge of 5.5 nanocoulombs, enabling fast and efficient switching operation. It supports a maximum gate-source voltage rating of ±12 volts, ensuring robustness against voltage spikes. Its forward voltage is measured at 0.8 volts, and it operates reliably across a wide temperature range from -55°C to 150°C.
This MOSFET meets the stringent automotive AEC-Q101 standard, making it suitable for automotive and industrial applications requiring high reliability. Its precise and compact dimensions (3 mm length, 1.4 mm width, and 1 mm height) allow integration into dense PCBs where space is limited.
Ideal for use in power management, general switching, and control circuits, this MOSFET is a choice component in electronic assemblies used in industrial, automotive, laboratory, and consumer electronics sectors. Its surface mount design facilitates automated PCB assembly and production efficiency.
The MOSFET operates in enhancement mode for efficient switching. Max continuous drain current of 4 A supports high power handling. Compact SOT-23 3-pin package fits small footprint designs. Low Rds(on) resistance of 150 mΩ reduces conduction loss.
Wide operating temperature range from -55°C to 150°C ensures reliability. Automotive AEC-Q101 qualification for enhanced quality standards. Maximum power dissipation of 1.4 W allows handling of heat dissipation. Typical gate charge of 5.5 nC supports fast switching speeds.
Robust gate-source voltage tolerance of ±12 V protects against voltage spikes. Explore more reliable semiconductor solutions in the Electronics & Electricals > Discrete Semiconductors > MOSFET category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It has a maximum drain-source voltage rating of 30 V.
This MOSFET has dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height.
The maximum power dissipation is 1.4 W.
The typical gate charge is 5.5 nanocoulombs (nC).
The maximum gate-source voltage rating is ±12 V.
It operates reliably within a temperature range of -55°C to 150°C.
It is packaged in a 3-pin SOT-23 surface mount configuration.
This model meets the automotive AEC-Q101 standard for reliability.
The maximum drain-source resistance is 150 milliohms (mΩ).
It is an N-channel MOSFET, operating in enhancement mode.
This MOSFET is suitable for power management, general switching, and control circuits in various sectors including automotive and industrial applications.
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