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Toshiba DTMOSIV N-Channel MOSFET 31 A 600 V Enhancement Mode 3-Pin TO-220 TK31A60W,S4VX(M)

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Toshiba DTMOSIV N-Channel MOSFET 31 A 600 V Enhancement Mode 3-Pin TO-220 TK31A60W,S4VX(M)

Name: Toshiba DTMOSIV N-Channel MOSFET 31 A 600 V Enhancement Mode 3-Pin TO-220 TK31A60W,S4VX(M)
Brand: Toshiba
SKU: 411937
Price: 3.55 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Malaysia
Brand	Toshiba
Height	15mm
Length	10mm
Model	TK31A60W,S4VX(M
Width	4.5mm
Mount Type	Through Hole
Series	DTMOSIV
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	31A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	88mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	45W
Typical Gate Charge Qg @ Vgs	86nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-1.7V

Key Features

Maximum continuous drain current of 31 Amperes supports high power applications.
Maximum drain-to-source voltage rating of 600 Volts ensures robust operation.
Low maximum drain-source resistance of 88 milliohm reduces conduction losses.
TO-220 through-hole package type for easy PCB mounting and heat dissipation.
Enhancement mode channel for stable switching performance.
Maximum power dissipation of 45 Watts allows efficient thermal management.
Typical gate charge of 86 nanoCoulombs at Vgs for fast switching speeds.
Wide maximum gate-to-source voltage range from -30 V to +30 V for versatility.

Product Description

Toshiba TK31A60W,S4VX(M is a high-quality DTMOSIV N-Channel MOSFET designed to handle continuous drain currents up to 31 Amperes and maximum drain-to-source voltages of 600 Volts. Featuring an enhancement mode channel and housed in a TO-220 3-pin package, it provides excellent electrical performance and reliable switching characteristics suitable for demanding industrial, automotive, and electronic circuitry applications.

This MOSFET supports through-hole mounting for easy integration into printed circuit boards and offers robust thermal dissipation with a maximum power rating of 45 Watts. Its low maximum drain-source resistance (Rds) of 88 milliohms minimizes conduction losses, improving system efficiency.

The device's typical gate charge of 86 nanoCoulombs at Vgs ensures fast switching, enhancing performance in power conversion and amplification roles. It operates safely within a gate-to-source voltage range from -30 to +30 Volts, providing flexibility in various control schemes.

Designed for use in industrial, power management, and electronic manufacturing, it withstands operating temperatures as high as 150 degrees Celsius, making it reliable in harsh environments. Compact physical dimensions of 15 mm height, 10 mm length, and 4.5 mm width optimize PCB space utilization.

Maximum continuous drain current of 31 A supports heavy load requirements. 600 V maximum drain-source voltage rating for high-voltage applications. TO-220 package with 3 pins for versatile mounting. Enhancement mode channel for improved switch control.

Low Rds(on) reduces power dissipation enhancing efficiency. Gate charge of 86 nC enables fast switching speeds. Wide gate-source voltage range ensures application flexibility. Operates up to 150°C maximum temperature for reliability.

Compact design optimizes space with 15x10x4.5 mm dimensions.

This component is ideally suited for electronics manufacturing, power electronics, industrial controllers, and automotive electronics. Toshiba's precision semiconductor technology ensures optimum performance, durability, and integration ease for advanced power management solutions.

Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for your industrial and commercial needs.