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onsemi General Purpose NPN Transistor, 100 mA Collector Current, 50 V Collector-Emitter Voltage, 5-Pin SOT-353 NSB1706DMW5T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model NSB1706DMW5T1G
Width 2.2mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-353
Minimum Operating Temperature -55°C
Pin Count 5
Maximum Collector Emitter Voltage Vceo 50V dc
Minimum DC Current Gain hFE 80
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V dc
Maximum Power Dissipation Pd 385mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Common Emitter

Key Features

  • This transistor comes in a compact 5-Pin SOT-353 surface mount package.
  • It operates reliably from -55°C up to 150°C ambient temperature.
  • It features a common emitter configuration suitable for various amplification applications.
  • Maximum power dissipation is 385 mW, ensuring robust performance in low power circuits.
  • The device offers a minimum DC current gain (hFE) of 80 for effective signal amplification.
  • It has a maximum emitter base voltage of 6 V and maximum collector base voltage of 50 V.
  • Designed for surface mount technology, facilitating automated PCB assembly.
  • The transistor does not carry automotive approval but is suitable for general electronic applications.

Product Description

The onsemi NSB1706DMW5T1G is a general purpose NPN bipolar transistor designed for signal amplification and switching in electronic circuits.

Rated for a maximum DC collector current of 100 mA and a collector-emitter voltage of 50 V, it is well suited for low power electronic applications requiring reliable transistor switching.

The device is packaged in a 5-Pin SOT-353 surface mount form factor, measuring 2.2 mm width, 2.2 mm length, and 1.1 mm height, enabling compact PCB layouts.

Operating temperature range spans from -55°C to 150°C, allowing usage in a wide array of environments including industrial, automotive (non-AEC-Q101 automotive qualified), and consumer electronics.

Compact 5-Pin SOT-353 surface mount package. Maximum DC collector current of 100 mA. Collector-emitter voltage rating of 50 V. Common emitter transistor configuration. Minimum DC current gain (hFE) of 80. Maximum power dissipation of 385 mW.

Wide operating temperature range from -55°C to 150°C. Maximum emitter base voltage of 6 V and collector base voltage of 50 V.

This transistor finds applications in industrial automation controls, electronic instrumentation, signal processing, and general electronic devices. Its compact footprint supports high-density PCB assemblies.

Explore more onsemiconductor discrete Bipolar Transistors and components in the Electronics & Electricals category at EnvMart.

onsemi General Purpose NPN Transistor, 100 mA Collector Current, 50 V Collector-Emitter Voltage, 5-Pin SOT-353 NSB1706DMW5T1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The collector-emitter voltage rating is 50 V.

It has a minimum DC current gain (hFE) of 80.

The dimensions of the SOT-353 package are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

The operating temperature range spans from -55°C to 150°C.

The maximum power dissipation is 385 mW.

This model uses a common emitter configuration.

The maximum emitter base voltage is 6 V.

It can be used in applications such as industrial automation controls, electronic instrumentation, and signal processing.

This transistor has a total of 5 pins.

Yes, it is designed for surface mount technology, facilitating automated PCB assembly.

The country of origin for this product is India.

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