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Infineon CoolMOS CFD7 N-Channel MOSFET 14 A 600 V Enhancement 3-Pin TO-220 IPP60R170CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPP60R170CFD7XKSA1 |
| Mount Type | Through Hole |
| Series | CoolMOS CFD7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 75W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 14 A ensures robust performance under load.
- Rated for a maximum drain-source voltage of 600 V suitable for high-voltage circuits.
- 3-pin TO-220 package supports through-hole mount for easy integration.
- Enhanced channel mode provides improved switching and low power losses.
- Maximum power dissipation rating of 75 W for reliable thermal management.
- Typical gate charge of 28 nC at Vgs for efficient gate drive operation.
- Wide operating temperature range from -55°C to 150°C for versatile environments.
- Integrated fast body diode offers superior reverse recovery characteristics.
Product Description
Infineon IPP60R170CFD7XKSA1 is a CoolMOS CFD7 N-Channel MOSFET designed for efficient high-voltage switching applications with a continuous drain current of 14 A and maximum drain-source voltage of 600 V. Packaged in a 3-pin TO-220 case with through-hole mounting, this device features advanced Enhancement mode channel technology for low conduction and switching losses. It provides a maximum power dissipation of 75 W and typical gate charge of 28 nC at Vgs, enabling energy-efficient operation in industrial and power electronics applications.
This MOSFET incorporates an ultra-fast body diode with best-in-class reverse recovery charge (Qrr) that significantly reduces switching losses and electromagnetic interference. The device is engineered for improved turn-off behavior and ruggedness against reverse diode dv/dt and di/dt stresses, ensuring durability in demanding environments. Operating within a temperature range of -55°C to 150°C, it is ideal for industrial, commercial, and power control systems requiring high reliability.
The CoolMOS CFD7 series is optimized for best-in-class RDS(on)/package combinations and low energy loss during switching events, making it suitable for power supplies, motor drives, and renewable energy inverters. Its enhanced gate-source voltage rating of 20 V and low forward voltage of 1 V contribute to overall system efficiency and thermal performance.
Maximum continuous drain current of 14 A. Maximum drain-source voltage rating of 600 V. TO-220 3-pin package supporting through-hole mount. Enhanced channel mode for superior switching performance. Typical gate charge of 28 nC at Vgs.
Power dissipation capacity of 75 W. Wide operating temperature range from -55°C to 150°C. Integrated ultra-fast body diode for low Qrr and excellent efficiency. Ideal for industrial power electronics and high voltage applications.
Explore the Infineon CoolMOS CFD7 range at EnvMart for advanced semiconductor solutions designed to optimize power efficiency and performance in industrial, laboratory, HVAC, and renewable energy applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 14 A, ensuring robust performance under load.
It has a maximum drain-source voltage rating of 600 V, making it suitable for high-voltage circuits.
This MOSFET is packaged in a 3-pin TO-220 case, which supports through-hole mounting for easy integration.
The typical gate charge at Vgs for this unit is 28 nC, which facilitates efficient gate drive operation.
It has a maximum power dissipation rating of 75 W, which supports reliable thermal management.
The operating temperature range for this model is from -55°C to 150°C, allowing it to function in versatile environments.
This device features an N-channel type, which is designed for enhancement mode operation.
The maximum gate-source voltage rating for this model is 20 V, contributing to its overall system efficiency.
The forward voltage of this unit is 1 V, which is beneficial for overall thermal performance.
This model incorporates an ultra-fast body diode with best-in-class reverse recovery charge (Qrr), reducing switching losses.
The maximum drain-source resistance (Rds) for this MOSFET is 170 mΩ, which aids in minimizing conduction losses.
This model is ideal for applications in industrial power electronics, power supplies, motor drives, and renewable energy inverters.
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