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DiodesZetex Type P-Channel MOSFET, 280mA Continuous Drain Current, 60V Drain-Source Voltage, Enhancement Mode ZVP2106ASTZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZVP2106ASTZ |
| Width | 2.41mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 280mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 700mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- The device is an enhancement mode MOSFET designed for switching and amplification.
- Maximum power dissipation is 700mW, suitable for low-power applications.
- Operates over a wide temperature range from -55°C to 150°C.
- Mountable through-hole style with pin count of 3 for easy PCB integration.
- Maximum gate-source voltage rating is -20V to +20V ensuring robust operation.
- Compact dimensions with length 4.77mm, width 2.41mm, and height 4.01mm.
- Maximum continuous drain current of 280mA supports moderate load currents.
- Drain-source resistance (Rds) of 5Ω ensures efficient conduction.
Product Description
The DiodesZetex ZVP2106ASTZ is a high-quality P-Channel MOSFET transistor designed for electronic and power control applications. This enhancement mode semiconductor device supports a maximum continuous drain current of 280mA and a maximum drain-source voltage of 60V, making it suitable for various industrial, commercial, and laboratory electronics projects.
Housed in a 3-pin TO-92 through-hole package, the ZVP2106ASTZ offers easy mounting on PCBs and provides reliable switching capabilities. It operates efficiently within a broad temperature range, spanning from -55°C to 150°C, thus ensuring performance stability in demanding environments.
The MOSFET's power dissipation rating is 700mW, enabling it to handle low to moderate power applications with minimal thermal management requirements. The device features a maximum gate-source voltage of ±20V, providing ruggedness against input voltage spikes. Additionally, the drain-source on-resistance Rds(on) is 5Ω, contributing to lower conduction losses and improved energy efficiency.
Compact dimensions (length: 4.77mm, width: 2.41mm, height: 4.01mm) make this transistor suitable for space-constrained designs. Its P-Channel nature supports PMOS configurations in switching circuits, amplifiers, and other semiconductor-based hardware.
The device is an enhancement mode MOSFET designed for switching and amplification. Maximum power dissipation is 700mW, suitable for low-power applications. Operates over a wide temperature range from -55°C to 150°C. Mountable through-hole style with pin count of 3 for easy PCB integration.
Maximum gate-source voltage rating is -20V to +20V ensuring robust operation. Compact dimensions with length 4.77mm, width 2.41mm, and height 4.01mm. Maximum continuous drain current of 280mA supports moderate load currents.
Drain-source resistance (Rds) of 5Ω ensures efficient conduction. This MOSFET is suited for industrial automation, consumer electronics, power management, and other semiconductor applications that demand reliable P-Channel MOSFET transistors.
Explore more MOSFETs and discrete semiconductor devices within the Electronics & Electricals category at EnvMart for comprehensive selection and quality assurance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 280mA, which supports moderate load currents.
The maximum drain-source voltage rating for this P-Channel MOSFET is 60V, allowing it to handle a range of applications.
The maximum power dissipation for the ZVP2106ASTZ is 700mW, making it suitable for low to moderate power applications.
This model has compact dimensions with a length of 4.77mm, a width of 2.41mm, and a height of 4.01mm.
The ZVP2106ASTZ operates over a wide temperature range from -55°C to 150°C, ensuring performance stability in various environments.
This model is housed in a TO-92 through-hole package, which allows for easy mounting on PCBs.
The maximum gate-source voltage rating for the ZVP2106ASTZ is -20V to +20V, providing robustness against input voltage spikes.
The drain-source resistance (Rds) for the ZVP2106ASTZ is 5Ω, which contributes to efficient conduction.
This MOSFET has a pin count of 3, facilitating its integration into various electronic circuits.
This model is a Type P channel MOSFET, suitable for PMOS configurations in switching circuits and amplifiers.
The ZVP2106ASTZ is suited for industrial automation, consumer electronics, and power management applications.
The country of origin for this model is India.
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