Infineon RF Bipolar NPN Transistor 35 mA, 6 V, 3-Pin TSFP Package BFR360FH6327XTSA1

Infineon BFR360FH6327XTSA1 is a RF bipolar transistor featuring NPN polarity and designed for surface mounting in electronic circuits. It has a maximum DC collector current of 35 mA and supports a collector-emitter voltage of 6 V, making it suitable for low to medium power amplification applications.

This transistor’s compact 3-pin TSFP package facilitates space-saving on printed circuit boards while enabling compatibility with automated pick-and-place manufacturing processes.

With a high transition frequency of 14 GHz and a minimum DC current gain of 90, the BFR360FH6327XTSA1 transistor excels in high-frequency and RF signal amplification tasks commonly found in telecommunications, automotive electronics, and industrial equipment.

The device supports operation at temperatures up to 150°C, allowing reliable performance in demanding environments. Maximum power dissipation is rated at 210 mW, requiring proper thermal design consideration during application.

Typical applications include RF amplifiers, oscillators, and signal processing circuits in commercial, industrial, automotive, and laboratory environments. Maximum DC collector current of 35 mA ensures reliable operation in low power circuits.

Collector-emitter voltage rating of 6 V supports moderate voltage handling. Compact 3-pin TSFP surface mount package aids automated PCB assembly. High transition frequency of 14 GHz suitable for RF applications. Maximum power dissipation of 210 mW supports efficient thermal management.

Minimum DC current gain of 90 for good amplification. Wide operating temperature range up to 150°C for harsh environments. Package dimensions: Length 1.2 mm, Width 0.8 mm, Height 0.55 mm. NPN polarity and single configuration for switching and amplification.

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