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DiodesZetex N-Channel MOSFET 1.3 A 20 V Enhancement Mode Surface Mount 3-Pin X2-DFN DMN2300UFB4-7B
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 350μm |
| Length | 1.05mm |
| Model | DMN2300UFB4-7B |
| Width | 650μm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | X2-DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 1.6nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 700mV |
Key Features
- Enhancement mode operation for efficient switching performance.
- Maximum continuous drain current of 1.3 amperes ensures reliable current handling.
- Operates with maximum drain source voltage of 20 volts suitable for low-voltage applications.
- Compact 3-pin X2-DFN package designed for surface mount mounting and space-saving PCB layouts.
- Maximum drain source resistance of 500 milliohms reduces power loss during conduction.
- Typical gate charge of 1.6 nanocoulombs enables fast switching speeds.
- Wide operating temperature range from -55°C to 150°C for robust industrial and automotive use.
- Complies with automotive standard AEC-Q101 ensuring high reliability in automotive environments.
Product Description
DiodesZetex DMN2300UFB4-7B is a high-performance N-Channel Enhancement Mode MOSFET designed for surface mount applications. It supports a maximum continuous drain current of 1.3 amperes and a maximum drain source voltage of 20 volts, packaged in a compact 3-pin X2-DFN configuration which facilitates efficient PCB space utilization.
This MOSFET operates with a low maximum drain source resistance of 500 milliohms, allowing for reduced conduction losses and improved power efficiency in switching circuits. The typical gate charge is 1.6 nanocoulombs, promoting fast switching necessary for high-frequency applications.
The device supports a gate source voltage range of -8 volts to +8 volts and has a forward voltage drop of approximately 700 millivolts. It is engineered to operate reliably across a wide temperature spectrum from -55°C to +150°C, making it suitable for demanding industrial, automotive, and electronic applications.
Manufactured to meet the automotive standard AEC-Q101, this MOSFET ensures enhanced durability and quality required in automotive electronic systems. Its ultra-thin height of 350 micrometers, length of 1.05 millimeters, and width of 650 micrometers make it ideal for compact designs.
Typical applications include power management, switching regulators, load switching, and other control circuits in industrial and automotive sectors. Its surface mount design supports easy integration into automated assembly processes, boosting production efficiency.
Enhancement mode operation for efficient switching performance. Maximum continuous drain current of 1.3 amperes ensures reliable current handling. Operates with maximum drain source voltage of 20 volts suitable for low-voltage applications.
Compact 3-pin X2-DFN package designed for surface mount mounting and space-saving PCB layouts. Maximum drain source resistance of 500 milliohms reduces power loss during conduction. Typical gate charge of 1.6 nanocoulombs enables fast switching speeds.
Wide operating temperature range from -55°C to 150°C for robust industrial and automotive use. Complies with automotive standard AEC-Q101 ensuring high reliability in automotive environments. Explore more components and solutions in the MOSFET category at EnvMart for your industrial, laboratory, automotive, and electronics manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.3 amperes.
It operates with a maximum drain source voltage of 20 volts, suitable for low-voltage applications.
This model is packaged in a compact 3-pin X2-DFN configuration designed for surface mount applications.
The typical gate charge is 1.6 nanocoulombs, which enables fast switching speeds.
It has a maximum drain source resistance of 500 milliohms, which helps reduce power loss during conduction.
It operates reliably across a wide temperature range from -55°C to 150°C.
This model complies with the automotive standard AEC-Q101, ensuring high reliability in automotive environments.
The dimensions are a height of 350 micrometers, length of 1.05 millimeters, and width of 650 micrometers.
The maximum gate source voltage is -8 volts to +8 volts.
The forward voltage drop is approximately 700 millivolts.
Typical applications include power management, switching regulators, load switching, and other control circuits in industrial and automotive sectors.
The maximum power dissipation is 500 milliwatts.
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