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Toshiba SSM3 Type P-Channel MOSFET, 100 mA, 20 V Enhancement Mode, 3-Pin Surface Mount SSM SSM3J35FS(TE85L,F)

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 700μm
Length 1.6mm
Model SSM3J35FS(TE85L,F)
Width 800μm
Mount Type Surface
Series SSM3
Maximum Operating Temperature 150°C
Package Type SSM
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 100mA
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 44Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 100mW
Maximum Gate Source Voltage Vgs -10, +10V
Forward Voltage Vf 830mV

Key Features

  • This MOSFET features an enhancement mode channel for efficient switching performance.
  • Maximum power dissipation is rated at 100 mW, suitable for low-power circuits.
  • The device package is an SSM type with 3 pins optimized for surface mounting.
  • Operates reliably between -55°C and 150°C, making it suitable for various environmental conditions.
  • Maximum gate-source voltage ranges from -10 V to +10 V for robust control.
  • Forward voltage of 830 mV ensures low conduction losses.
  • Maximum drain-source resistance is 44 Ω, ensuring minimal power loss in operation.

Product Description

Toshiba's SSM3J35FS(TE85L,F) P-Channel MOSFET is engineered to provide reliable switching performance in compact surface mount packages. With a maximum continuous drain current of 100 mA and a drain-source voltage rating of 20 V, this transistor is optimal for low-power electronics and circuit control applications.

The device uses enhancement mode operation, enabling effective switching control. It dissipates up to 100 mW of power and is designed for surface mounting on compact PCBs with its small SSM package featuring 3 pins.

Operating temperature ranges from -55°C to 150°C, allowing use in industrial, commercial, and automotive applications with moderate thermal demands. The MOSFET's physical dimensions - 800 µm wide, 700 µm high, and 1.6 mm long - make it suitable for space-constrained designs.

Additional electrical characteristics include a maximum gate-source voltage of -10 to +10 V, a forward voltage of 830 mV for efficient conduction, and a drain-source resistance of 44 Ω. These parameters support low-loss switching and control in sensitive electronic circuits.

This component is made in Japan and meets rigorous quality standards expected from Toshiba semiconductor devices. This MOSFET features an enhancement mode channel for efficient switching performance. Maximum power dissipation is rated at 100 mW, suitable for low-power circuits.

The device package is an SSM type with 3 pins optimized for surface mounting. Operates reliably between -55°C and 150°C, making it suitable for various environmental conditions. Dimensions include a width of 800 µm, height of 700 µm, and length of 1.6 mm for compact PCB designs.

Maximum gate-source voltage ranges from -10 V to +10 V for robust control. Forward voltage of 830 mV ensures low conduction losses. Maximum drain-source resistance is 44 Ω, ensuring minimal power loss in operation.

Ideal for industrial, laboratory, construction, and automotive electronics applications, this MOSFET delivers dependable performance in compact form factors. Browse other semiconductor components in the Electronics & Electricals category on EnvMart.

Toshiba SSM3 Type P-Channel MOSFET, 100 mA, 20 V Enhancement Mode, 3-Pin Surface Mount SSM SSM3J35FS(TE85L,F)
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Frequently Asked Questions

The maximum continuous drain current for this model is rated at 100 mA.

This MOSFET has a maximum drain-source voltage rating of 20 V.

The dimensions of this model are 800 µm in width, 700 µm in height, and 1.6 mm in length.

It operates reliably between -55°C and 150°C, making it suitable for various environmental conditions.

The maximum power dissipation for this model is rated at 100 mW.

This model uses an SSM type package optimized for surface mounting with 3 pins.

The maximum gate-source voltage ranges from -10 V to +10 V.

The forward voltage for this model is 830 mV, ensuring low conduction losses.

The maximum drain-source resistance is 44 Ω, which helps minimize power loss during operation.

This model features a P-Channel type for enhancement mode operation.

This MOSFET is manufactured in Japan.

This MOSFET is suitable for low-power electronics and circuit control applications, including industrial and automotive uses.

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