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| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 700μm |
| Length | 1.6mm |
| Model | SSM3J35FS(TE85L,F) |
| Width | 800μm |
| Mount Type | Surface |
| Series | SSM3 |
| Maximum Operating Temperature | 150°C |
| Package Type | SSM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 100mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 44Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100mW |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 830mV |
Toshiba's SSM3J35FS(TE85L,F) P-Channel MOSFET is engineered to provide reliable switching performance in compact surface mount packages. With a maximum continuous drain current of 100 mA and a drain-source voltage rating of 20 V, this transistor is optimal for low-power electronics and circuit control applications.
The device uses enhancement mode operation, enabling effective switching control. It dissipates up to 100 mW of power and is designed for surface mounting on compact PCBs with its small SSM package featuring 3 pins.
Operating temperature ranges from -55°C to 150°C, allowing use in industrial, commercial, and automotive applications with moderate thermal demands. The MOSFET's physical dimensions - 800 µm wide, 700 µm high, and 1.6 mm long - make it suitable for space-constrained designs.
Additional electrical characteristics include a maximum gate-source voltage of -10 to +10 V, a forward voltage of 830 mV for efficient conduction, and a drain-source resistance of 44 Ω. These parameters support low-loss switching and control in sensitive electronic circuits.
This component is made in Japan and meets rigorous quality standards expected from Toshiba semiconductor devices. This MOSFET features an enhancement mode channel for efficient switching performance. Maximum power dissipation is rated at 100 mW, suitable for low-power circuits.
The device package is an SSM type with 3 pins optimized for surface mounting. Operates reliably between -55°C and 150°C, making it suitable for various environmental conditions. Dimensions include a width of 800 µm, height of 700 µm, and length of 1.6 mm for compact PCB designs.
Maximum gate-source voltage ranges from -10 V to +10 V for robust control. Forward voltage of 830 mV ensures low conduction losses. Maximum drain-source resistance is 44 Ω, ensuring minimal power loss in operation.
Ideal for industrial, laboratory, construction, and automotive electronics applications, this MOSFET delivers dependable performance in compact form factors. Browse other semiconductor components in the Electronics & Electricals category on EnvMart.
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