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Vishay TrenchFET N-Channel Power MOSFET, 100 A, 60 V, 107 W, TO-252 Surface Mount, 3-Pin SQD50034E_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.57mm |
| Length | 10.41mm |
| Model | SQD50034E_GE3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.0039Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 107W |
| Typical Gate Charge Qg @ Vgs | 90nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Rated for maximum continuous drain current of 100 amperes.
- Features a low on-resistance of 0.0039 ohms for efficient conduction.
- Supports a maximum drain-source voltage of 60 volts.
- Enhancement mode channel with a typical gate charge of 90 nanocoulombs.
- Operates safely up to 175 degrees Celsius maximum temperature.
- Surface mount TO-252 package with 3 pins for compact PCB integration.
- Compliant with automotive industry AEC-Q101 standards.
- Compatible with high density, low thermal resistance power designs.
Product Description
Vishay SQD50034E_GE3 is a high-performance TrenchFET N-Channel power MOSFET designed for demanding electronic applications requiring robust current handling and efficient switching. This device features a continuous drain current rating of 100 amperes and a drain-source voltage of 60 volts, making it well-suited for power management, motor control, and automotive electronics.
Housed in a TO-252 surface mount package with 3 pins, the MOSFET enables compact, reliable mounting on printed circuit boards. Its low on-resistance of 0.0039 ohms minimizes conduction losses and power dissipation, supported by a maximum power dissipation rating of 107 watts. The device's enhancement channel type and typical gate charge of 90 nanocoulombs allow for fast switching speeds with minimal gate drive requirements.
Rated to operate over a wide temperature range from -55°C minimum to 175°C maximum, this MOSFET complies with the AEC-Q101 automotive standard, ensuring reliable performance in harsh environments including industrial, automotive, and manufacturing applications. The device's dimensions of approximately 10.41 mm length, 9.65 mm width, and 4.57 mm height contribute to efficient thermal management in dense assemblies.
Typical use cases include power supply regulation, DC-DC converters, brushless motor drives, and general switching applications in automotive control units and industrial machinery. The TrenchFET technology enhances device ruggedness and electrical efficiency.
Rated for maximum continuous drain current of 100 amperes. Features a low on-resistance of 0.0039 ohms for efficient conduction. Supports a maximum drain-source voltage of 60 volts. Enhancement mode channel with a typical gate charge of 90 nanocoulombs.
Operates safely up to 175 degrees Celsius maximum temperature. Surface mount TO-252 package with 3 pins for compact PCB integration. Compliant with automotive industry AEC-Q101 standards. Compatible with high density, low thermal resistance power designs.
This Vishay TrenchFET N-Channel Power MOSFET SQD50034E_GE3 delivers reliable high current and voltage handling capabilities essential for advanced electronic, automotive, industrial, and manufacturing sectors. For more Vishay semiconductor products and Power MOSFETs, explore EnvMart’s extensive electronics catalog.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 100 amperes.
This model supports a maximum drain-source voltage of 60 volts.
The on-resistance value for this power MOSFET is 0.0039 ohms, which aids in efficient conduction.
The typical gate charge for this device is 90 nanocoulombs.
The dimensions of the TO-252 package are approximately 10.41 mm in length, 9.65 mm in width, and 4.57 mm in height.
The maximum power dissipation rating for this MOSFET is 107 watts.
This model operates safely within a temperature range from -55°C to 175°C.
Yes, this MOSFET is compliant with the automotive industry AEC-Q101 standards.
This MOSFET features an enhancement mode N-channel type.
The TO-252 package has 3 pins.
This power MOSFET is suitable for applications such as power supply regulation, DC-DC converters, and motor control.
The maximum gate-source voltage for this MOSFET is 20 volts.
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