Vishay N-Channel Power MOSFET 5.6 A, 100 V Enhancement, 3-Pin TO-220AB IRF510PBF

Vishay IRF510PBF is a high-reliability N-Channel Power MOSFET designed for medium power switching and amplification tasks in through-hole configurations. It features a maximum continuous drain current of 5.6 A and a maximum drain-source voltage rating of 100 V, making it suitable for a wide range of electronic applications requiring efficient power control.

The device operates in enhancement mode with a low on-resistance (Rds(on)) of 540mΩ, reducing conduction losses and improving overall circuit efficiency. It can dissipate up to 43 W of power when mounted on an appropriate heatsink, supporting sustained operation without thermal issues.

With a gate charge of 8.3 nC, the IRF510PBF achieves reasonably fast switching speeds, and its ±20 V gate-source voltage tolerance ensures compatibility with common drive voltages. This MOSFET is packaged in a standard 3-pin TO-220AB form factor with a flat rear tab, allowing easy mounting to heatsinks for effective thermal management.

The component is certified RoHS compliant and designed to operate within the temperature range of -55°C to 175°C, enabling use in demanding industrial, laboratory, and electronic power supply environments. It is not approved for automotive standards and should not be used in regulated vehicle applications.

Supports high-voltage switching applications with 100 V drain voltage rating. Handles moderate load currents of 5.6A continuous drain current. Low on-resistance of 540mΩ reduces conduction losses for efficient switching.

Maximum power dissipation of 43W enables sustained power handling with proper cooling. Operates reliably across a wide temperature range from -55°C to 175°C junction temperature. Typical gate charge of 8.3nC allows reasonably fast switching response.

Wide gate-source voltage tolerance of ±20V for common gate-drive compatibility. Supplied in a through-hole TO-220AB package suitable for heatsink mounting. Ideal for amplifier output stages, general-purpose switching, motor control, power conversion, and prototyping applications.

Not compliant with automotive standard approvals.

This Power MOSFET is widely used in amplifier circuit output stages for audio equipment, general-purpose switch mode power supplies, motor drive control, and power conversion systems. Its robust operating temperature range also makes it suitable for educational and prototyping projects requiring reliable through-hole mounting and thermal management. Engineers and developers can use this Vishay IRF510PBF MOSFET as a drop-in transistor replacement component for repair and custom builds.

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