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Vishay N-Channel MOSFET 6 A, 30 V Enhancement Mode, 3-Pin SOT-23 Surface Mount Si2338DS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | Si2338DS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2338DS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.033Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 4.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Offers enhancement mode channel operation for switching applications.
- Maximum drain-source resistance of 0.033 ohms ensures efficient conduction.
- Typical gate charge of 4.2 nC at Vgs optimizes switching speeds.
- Maximum power dissipation rated at 2.5 W supports moderate power loads.
- Operates reliably from -55°C to 150°C for harsh environments.
- Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height enable space-saving PCB designs.
- Package type SOT-23 supports surface mount technology assembly.
- Complies with RoHS and IEC 61249-2-21 standards for environmental and quality compliance.
Product Description
Vishay Si2338DS-T1-GE3 is an N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It supports a maximum continuous drain current of 6 A and a maximum drain-source voltage of 30 V, making it suitable for moderate power applications in power management, signal processing, and motor control. The device utilizes enhancement mode channel operation and features a low maximum drain-source resistance of 0.033 ohms, which minimizes conduction losses and improves efficiency.
This MOSFET is housed in a compact 3-pin SOT-23 surface mount package, measuring 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, which is ideal for high-density PCB layouts and automated assembly processes. It supports a maximum power dissipation of 2.5 W and operates reliably in a broad temperature range from -55°C to 150°C, enabling its use in industrial, automotive, and consumer electronics with demanding thermal requirements.
The typical gate charge of 4.2 nC at specified gate voltage ensures fast switching performance, important for power conversion and signal switching circuits. The device complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, affirming its adherence to environmental regulations and quality standards. It is manufactured in China and is provided in new condition, verified for quality and reliability.
Its surface mount configuration and ease of integration make it suitable for industrial electronics, power supplies, telecommunications, automotive electronics, and consumer devices requiring efficient and reliable MOSFET components.
Offers enhancement mode channel operation for switching applications. Maximum drain-source resistance of 0.033 ohms ensures efficient conduction. Typical gate charge of 4.2 nC at Vgs optimizes switching speeds. Maximum power dissipation rated at 2.5 W supports moderate power loads.
Broad operating temperature range from -55°C to 150°C. Compact 3-pin SOT-23 surface mount package saves PCB space. RoHS and IEC 61249-2-21 compliant for quality and environmental standards. Manufactured in China with new condition assurance.
Explore Vishay products and other MOSFET components on EnvMart for a range of solutions in electronics manufacturing and design.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for the Si2338DS-T1-GE3 is 6 A.
It can handle a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs is 4.2 nC.
The SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation rating is 2.5 W.
It operates reliably in a temperature range from -55°C to 150°C.
This model utilizes enhancement mode channel operation.
The maximum drain-source resistance is 0.033 ohms.
It complies with RoHS and IEC 61249-2-21 standards for environmental and quality compliance.
The package type is SOT-23, which supports surface mount technology assembly.
The maximum gate-source voltage is -20V to +20V.
This model is suitable for power management, signal processing, and motor control applications.
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