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Vishay N-Channel MOSFET 28 A 100 V Enhancement 3-Pin TO-220 IRF540PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF540PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 28A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 77mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 72nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
| N-channel MOSFET,2SK2314 27A 100VBrand | Toshiba |
Key Features
- Supports a maximum continuous drain current of 28 A.
- Operates at a maximum drain-source voltage of 100 V.
- Packaged in a durable TO-220 through-hole format with 3 pins.
- Maximum power dissipation of 150 W ensures efficient thermal management.
- Typical gate charge of 72 nC allows fast switching speeds.
- Wide temperature range operation from -55°C to 175°C suits diverse environments.
- Low maximum drain-source resistance of 77 mΩ reduces conduction losses.
- Supports forward voltage of 2.5 V and gate-source voltages of -20V to +20V.
Product Description
Vishay IRF540PBF N-Channel MOSFET is a high-performance semiconductor transistor rated for a maximum continuous drain current of 28 amperes and a maximum drain-source voltage of 100 volts. This enhancement mode MOSFET is designed in a rugged TO-220 package with three pins and supports through-hole mounting, making it suitable for various industrial, electronic, and power management applications.
The device features a maximum power dissipation of 150 watts, allowing it to handle significant thermal loads during operation. With a typical gate charge of 72 nanocoulombs at Vgs, it enables efficient and rapid switching suitable for high-frequency circuits. Operating temperature ranges from -55°C to 175°C provide reliable performance in harsh environments.
Its low maximum drain-source on-resistance of 77 milliohms minimizes power losses, improving circuit efficiency. Additionally, the MOSFET can tolerate gate-source voltages from -20 volts to +20 volts and has a forward voltage of 2.5 volts, making it versatile for various power electronics designs.
The compact physical dimensions (length 10.41 mm, height 9.01 mm, width 4.7 mm) assist in space-efficient PCB layouts. This product is ideal for use in industrial controls, power supplies, motor drivers, and other electronic equipment requiring robust switching devices.
Supports a maximum continuous drain current of 28 A. Operates at up to 100 V drain-source voltage. Through-hole TO-220 package with 3 pins. Max power dissipation 150 W for efficient thermal handling. Typical gate charge 72 nC enabling fast switching.
Wide operating temperature range from -55°C to 175°C. Low drain-source resistance of 77 mΩ for reduced losses. Gate-source voltage tolerance from -20 V to +20 V. Compact size with 10.41 mm length and 9.01 mm height.
This Vishay IRF540PBF MOSFET is a reliable component for demanding applications in electronic manufacturing, power management, HVAC control systems, and industrial automation. Browse our Electronics & Electricals category for more components from Vishay and similar leading brands.
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Frequently Asked Questions
The IRF540PBF supports a maximum continuous drain current of 28 A.
It operates at a maximum drain-source voltage of 100 V.
This model is packaged in a TO-220 through-hole format with 3 pins.
The maximum power dissipation is 150 W, allowing for efficient thermal management.
It has a typical gate charge of 72 nC, which enables fast switching speeds.
This model operates within a wide temperature range from -55°C to 175°C.
The maximum drain-source resistance is 77 mΩ, which helps reduce conduction losses.
It can tolerate gate-source voltages from -20 V to +20 V.
The dimensions are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
It is suitable for various industrial, electronic, and power management applications such as motor drivers and power supplies.
This MOSFET features an N-channel design and operates in enhancement mode.
The country of origin for this product is India.
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