DiodesZetex ZVP3306A is a Type P-Channel MOSFET transistor featuring enhancement mode operation. This compact device supports a maximum continuous drain current of 160 mA and a maximum drain-source voltage of 60 volts, designed primarily for switching and amplification applications in electronic circuits.
The transistor comes in a 3-pin E-Line package suitable for through-hole mounting, ensuring ease of assembly and reliable electrical connection. It offers a low maximum drain-source resistance of 14 ohms, contributing to efficient switching performance.
With a maximum power dissipation of 625 milliwatts, the device can withstand moderate power loads while maintaining stability within a broad temperature range from -55°C to 150°C. This makes it ideal for use in both general electronic applications and automotive systems that require adherence to the AEC-Q101 standard.
The ZVP3306A has a specified forward voltage of 680 mV, facilitating low voltage drop and energy-efficient operation. Its compact size, with dimensions 4.77 mm in length, 2.41 mm width, and 4.01 mm height, enables incorporation into dense circuit designs.
The device operates in enhancement mode suitable for switching applications. It has a maximum power dissipation rating of 625 mW. Mounting is through hole, providing robust mechanical stability. The MOSFET features a maximum drain-source resistance of 14 ohms.
Designed to operate in a wide temperature range from -55°C to 150°C. Its pin configuration includes 3 pins for easy integration into electronic circuits. Forward voltage is specified at 680 mV ensuring low power loss. Complies with automotive standard AEC-Q101.
Compact physical dimensions: length 4.77 mm, width 2.41 mm, height 4.01 mm.
Typical applications for the ZVP3306A include industrial, automotive, and consumer electronics where efficient P-channel MOSFET switching is required. The product’s reliable performance and standard packaging make it ideal for circuit designs requiring stable transistor characteristics and easy installation.
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