DiodesZetex Isolated Dual Type P and Type N-Channel MOSFET, 8.2 A, 30 V Enhancement Mode, 8-Pin SOIC DMC3026LSD-13

DiodesZetex DMC3026LSD-13 is an isolated dual MOSFET device combining type P and type N channels in an 8-pin SOIC surface mount package. It operates in enhancement mode with a maximum continuous drain current of 8.2 A and maximum drain-source voltage of 30 V, making it ideal for compact, efficient power switching in industrial and automotive electronics.

The MOSFET features a low maximum drain-source resistance (Rds) of 29 mΩ, allowing for minimal conduction losses and efficient power dissipation up to 1.6 W. The device is designed to withstand operating temperatures from -55 °C up to +150 °C, suitable for demanding operating environments including automotive applications compliant with AEC-Q101 standard.

This MOSFET is constructed with isolated transistor configuration and supports gate-source voltage limits of -20 V to +20 V, with a typical gate charge of 6 nC ensuring fast switching characteristics. The compact form factor with dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height supports PCB space optimization.

Compliance with multiple industry standards, including MIL-STD-202, RoHS, UL 94V-0, and J-STD-020, guarantees reliability and environmental safety in manufacturing and use. The inclusion of two elements per chip enhances flexibility in circuit designs requiring dual channel functionality.

Maximum continuous drain current of 8.2 A ensures efficient power handling. Maximum drain-source voltage rating of 30 V suitable for low voltage switching applications. Enhancement mode channel operation for precise transistor control.

Compact 8-pin SOIC surface mount package supports space saving PCB layouts. Low drain-source resistance reduces power loss and improves efficiency. Wide operating temperature range allows use in industrial and automotive environments.

Typical gate charge of 6 nC enables quick switching response times. Certified under multiple standards including MIL-STD-202 and AEC-Q101 automotive quality compliance. Device dimensions are optimized for modern electronics with compactness in mind.

Isolated transistor configuration supports dual type P and N channel applications.

This MOSFET is suited for Industrial electronics, Automotive electronics, Power management circuits, and embedded system switching applications. Its dual-channel design and robust performance parameters make it suitable for manufacturers and developers requiring reliable, high performance discrete semiconductors.

Discover further components in the MOSFET category at EnvMart to find complementary discrete semiconductor solutions for your projects and manufacturing needs.