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Infineon HEXFET N-Channel MOSFET 9.3 A 200 V Enhancement Mode 3-Pin TO-220 IRF630NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF630NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.3A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 82W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| IRF630NPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Supports a continuous drain current of 9.3 amperes ensuring reliable operation.
- Operates at a maximum drain-source voltage of 200 volts suitable for high-voltage circuits.
- Utilizes enhancement mode channel with a 3-pin TO-220 package for easy through-hole mounting.
- Offers a maximum power dissipation of 82 watts enabling effective thermal management.
- Features fast switching speeds ideal for dynamic systems and power conversion.
- Maximum gate-source voltage of ±20 volts ensures circuit compatibility.
- Designed to handle operating temperatures up to 175 degrees Celsius for robust applications.
- Compact device dimensions fit into standard PCB layouts.
Product Description
Infineon IRF630NPBF HEXFET N-Channel MOSFET is a high-performance semiconductor device specialized for seamless power management in industrial, automation, and electronic sectors. It supports a maximum continuous drain current of 9.3 A and a drain-source voltage of 200 V, making it suitable for a variety of power conversion, motor control, and voltage regulation applications.
This enhancement mode transistor comes housed in a standard 3-pin TO-220 package designed for through-hole mounting. The device can dissipate up to 82 W of power, providing efficient thermal handling capabilities to maintain system stability and reliability even under demanding conditions.
Fast switching speeds reduce energy losses in dynamic systems such as DC-DC converters and switching power supplies. Its maximum gate-source voltage of ±20 V allows flexibility in circuit design, supporting a wide range of driver signals. The MOSFET is tested for operating temperatures ranging from -55°C to 175°C, ensuring reliable performance in harsh industrial environments.
Compact physical dimensions allow easy integration onto printed circuit boards in both commercial and industrial equipment. Fully avalanche rated, the IRF630NPBF withstands voltage transients and rugged operating conditions commonly encountered in automotive, renewable energy, HVAC control systems, and motor drive applications.
Supports continuous 9.3 A drain current. Operates at 200 V maximum drain-source voltage. 3-pin TO-220 through-hole package enhances power dissipation. 82 W maximum power dissipation for effective heat management. Fast switching speeds optimized for power conversion.
Maximum gate-source voltage of ±20 V for flexible drive compatibility. Robust operation from -55°C up to 175°C. Widely used in industrial power supplies and motor controls. Suitable for renewable energy systems and HVAC compressors.
This Infineon MOSFET is a critical component for power and electronics engineers seeking reliable, high-efficiency switching devices. EnvMart offers this product to support industrial, laboratory, manufacturing, and HVAC applications requiring robust electronic performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.3 A.
It operates at a maximum drain-source voltage of 200 V.
This MOSFET comes in a 3-pin TO-220 package designed for through-hole mounting.
The maximum power dissipation is 82 W, enabling effective thermal management.
The dimensions are 10.54 mm in length, 4.69 mm in width, and 8.77 mm in height.
The maximum gate-source voltage is ±20 V, which allows for flexible circuit design.
It is designed to operate within a temperature range of -55°C to 175°C.
This model utilizes an enhancement mode N-channel configuration.
It is widely used in power conversion, motor control, and voltage regulation applications.
The maximum drain-source resistance is 300 mΩ.
The typical gate charge at Vgs is 35 nC.
Yes, it is fully avalanche rated to withstand voltage transients and rugged operating conditions.
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