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Infineon OptiMOS 5 N-Channel MOSFET 90A 60V Enhancement Mode 3-Pin TO-252 IPD025N06NATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD025N06NATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 167W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current of 90 amperes for heavy load switching applications.
- Maximum drain-source voltage rating of 60 volts suitable for medium-voltage designs.
- Low on-resistance of 3.8 milliohms reduces conduction losses and improves efficiency.
- Typical gate charge of 71 nanocoulombs minimizes drive energy requirements.
- Maximum power dissipation of 167 watts allows elevated power handling capacity.
- Operates in a wide temperature range from -55°C to 175°C for harsh environments.
- Housed in a compact TO-252 (DPAK) surface-mount package for automated board assembly.
- Gate-source voltage maximum limits of -20 to +20 volts ensure reliable gate drive margins.
Product Description
Infineon IPD025N06NATMA1 is an OptiMOS 5 series N-Channel enhancement mode MOSFET engineered for high-current switching and conduction efficiency. It supports a continuous drain current up to 90 amperes and a drain-source voltage maximum of 60 volts, making it ideal for medium-voltage industrial and commercial electronics applications.
This MOSFET is designed for surface mounting on densely populated printed circuit boards in power supply modules and motor drive controllers. The low on-resistance of 3.8 milliohms significantly reduces conduction losses, increasing overall system efficiency.
The device features a typical gate charge of 71 nanocoulombs, which lowers the needed drive energy for switching, suited for robust gate-drive margins within a maximum gate-source voltage of ±20 volts. It can dissipate power up to 167 watts safely and operates reliably in temperature ranges from -55°C up to 175°C, supporting hostile thermal environments.
Encased in a TO-252 (DPAK) package, the MOSFET enables efficient thermal transfer to cooling mechanisms and is optimized for automated assembly on PCBs. Its 3-pin pinout ensures compatibility with standard power electronics designs.
Applications for this component include synchronous buck converters in power supplies, industrial motor-drive half-bridges, battery management systems demanding high current capacity, and DC-DC converters used in telecommunication equipment and server/storage electronics.
Supports 90A continuous drain current allowing heavy load switching. Low Rds(on) of 3.8 mΩ for higher efficiency. Medium voltage designs enabled by 60V maximum drain-source voltage. Wide operating temperature from -55 to 175°C for versatile deployment.
Compact TO-252 package supports surface mounting and heat dissipation. 71 nC gate charge reduces gate drive power requirements. Maximum power dissipation of 167W supports demanding thermal loads. N-Channel enhancement mode provides positive gate voltage conduction.
Robust gate-source voltage margin with ±20 V rating. Suitable for power stages in industrial, telecom, and server electronics. Explore the Infineon OptiMOS 5 series on EnvMart for efficient power transistor solutions in high-performance electronic designs.
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Frequently Asked Questions
The Infineon OptiMOS 5 N-Channel MOSFET supports a maximum continuous drain current of 90 amperes, making it suitable for heavy load switching applications.
This model has a maximum drain-source voltage rating of 60 volts, which is suitable for medium-voltage designs.
The on-resistance of this MOSFET is 3.8 milliohms, which helps reduce conduction losses and improve efficiency.
It features a typical gate charge of 71 nanocoulombs, which minimizes drive energy requirements for switching.
The maximum power dissipation for this model is 167 watts, allowing it to handle elevated power loads safely.
This MOSFET operates in a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.
It is housed in a compact TO-252 (DPAK) surface-mount package, which is optimized for automated assembly.
The Infineon OptiMOS 5 N-Channel MOSFET has a 3-pin configuration, ensuring compatibility with standard power electronics designs.
The maximum gate-source voltage rating for this device is ±20 volts, providing reliable gate drive margins.
This model is suitable for applications such as synchronous buck converters, industrial motor-drive half-bridges, and battery management systems.
The channel type of this device is N-Channel, which operates in enhancement mode for positive gate voltage conduction.
The country of origin for this MOSFET is India.
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