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Toshiba DTMOSIV N-Channel MOSFET 31A 600V Enhancement Mode 3-Pin TO-3PN TK31J60W5,S1VQ(O

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Toshiba DTMOSIV N-Channel MOSFET 31A 600V Enhancement Mode 3-Pin TO-3PN TK31J60W5,S1VQ(O

Name: Toshiba DTMOSIV N-Channel MOSFET 31A 600V Enhancement Mode 3-Pin TO-3PN TK31J60W5,S1VQ(O
Brand: Toshiba
SKU: 386025
Price: 5.85 USD
Availability: InStock

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Category Power MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	20mm
Length	15.5mm
Model	TK31J60W5,S1VQ(O
Width	4.5mm
Mount Type	Through Hole
Series	DTMOSIV
Maximum Operating Temperature	150°C
Package Type	TO-3PN
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	31A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	99mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	230W
Typical Gate Charge Qg @ Vgs	105nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-1.7V

Key Features

Maximum continuous drain current of 31 amperes ensures reliable high current handling.
The maximum drain-source voltage is rated at 600 volts for high voltage applications.
Through hole mounting type in TO-3PN package for easy PCB integration.
Low maximum drain-source resistance of 99 milliohms enhances efficiency.
Supports maximum power dissipation of 230 watts for industrial and power management uses.
Wide gate-source voltage tolerance from -30 V to +30 V allows robust operation.
Typical gate charge of 105 nano-Coulombs contributes to fast switching performance.
Operates safely up to 150 degrees Celsius ambient temperature for demanding environments.

Product Description

Toshiba TK31J60W5,S1VQ(O is a high-performance N-Channel MOSFET from the DTMOSIV series designed for demanding power electronic applications. It supports a maximum continuous drain current of 31 amperes and withstands a maximum drain-source voltage of 600 volts, making it suitable for switching and amplification tasks in industrial and commercial electronics.

The MOSFET employs an enhancement mode channel type and is housed in a reliable 3-Pin TO-3PN package optimized for through-hole mounting. It features a low maximum drain-source resistance of 99 milliohms, which reduces conduction losses and improves energy efficiency.

Designed to handle power dissipation up to 230 watts, it can operate at temperatures as high as 150°C, suitable for robust operation in challenging environmental conditions. The gate-source voltage range from -30 V to +30 V enables flexible driving conditions ensuring safe and versatile operation.

With a typical gate charge of 105 nano-Coulombs, the device ensures efficient switching capability, important for high-speed applications. The compact physical dimensions (20 mm height, 15.5 mm length, and 4.5 mm width) facilitate integration into constrained PCB spaces.

Manufactured in Japan, this MOSFET meets high-quality standards for semiconductor components. It is commonly used in power electronics, motor drives, industrial automation, and energy management systems among other electronic control applications.

Maximum continuous drain current of 31 amperes for high current applications. High-voltage capability at 600 volts drain-source voltage. Robust through-hole mounting in TO-3PN package. Low drain-source resistance reduces power losses.

Capable of dissipating up to 230 watts safely. Wide operating gate-source voltage range from -30 to +30 volts. Fast switching enabled by a gate charge of 105 nC. High maximum operating temperature of 150°C ensures durability.

Compact size suitable for dense electronic assemblies. Japanese origin guaranteeing component quality and reliability. Explore more Toshiba MOSFETs and discrete semiconductor components at EnvMart for reliable industrial and commercial electronic solutions.

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Frequently Asked Questions

The maximum continuous drain current for this model is 31 amperes, making it suitable for high current applications.

It has a maximum drain-source voltage rating of 600 volts, allowing it to be used in high voltage applications.

This model is housed in a TO-3PN package, which is designed for through-hole mounting.

The MOSFET supports a maximum power dissipation of 230 watts, suitable for industrial and power management uses.

It has a typical gate charge of 105 nano-Coulombs, which contributes to its fast switching performance.

This MOSFET can operate safely at ambient temperatures up to 150 degrees Celsius, making it suitable for demanding environments.

The maximum drain-source resistance is rated at 99 milliohms, which helps reduce conduction losses and improve efficiency.

It supports a wide gate-source voltage tolerance from -30 V to +30 V, allowing for robust operation.

The dimensions are 20 mm in height, 15.5 mm in length, and 4.5 mm in width, facilitating integration into compact PCB spaces.

This model employs an N-channel enhancement mode, which is common for switching and amplification tasks.

This MOSFET is manufactured in Japan, ensuring adherence to high-quality standards for semiconductor components.

It is commonly used in power electronics, motor drives, industrial automation, and energy management systems among other electronic control applications.