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onsemi QFET Type P-Channel MOSFET, 200 V, 5.2 A, 45 W TO-220 3-Pin Enhancement Mode FQPF7P20
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FQPF7P20 |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 690mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -5V |
Key Features
- Designed for enhancement mode operation with a low RDS(on) of 690 mΩ.
- Maximum power dissipation rating of 45 W ensures robust thermal performance.
- Features a typical gate charge of 19 nC for efficient switching.
- Suitable for through-hole mounting applications with 3 pins.
- Wide operating temperature range from -55°C to 150°C for diverse environments.
- Maximum gate-source voltage rating of ±30 V ensures gate protection.
- Applications include power supplies, DC-DC converters, PFC circuits, lighting ballasts, and motion control.
Product Description
onsemi FQPF7P20 QFET Type P-Channel MOSFET is a high-performance enhancement mode transistor designed for through-hole mounting using a TO-220 3-pin package. With a maximum continuous drain current of 5.2 A and a drain-to-source voltage of 200 V, it is suitable for a variety of industrial and electronic applications requiring efficient switching and low power loss.
This MOSFET features a maximum power dissipation of 45 W, allowing for reliable operation under heavy load conditions. The device benefits from a typical gate charge (Qg) of 19 nC, which contributes to reduced switching losses and improved efficiency in power management circuits.
The FQPF7P20 supports a wide ambient temperature range from -55°C up to 150°C, making it versatile for use in harsh environments such as industrial controls, automotive systems, and HVAC equipment. Its maximum gate-source voltage rating of ±30 V further enhances the protection and stability of the device during operation.
Physically, the transistor measures 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width, providing a compact footprint for PCB layout.
Typical industrial use cases include power supplies, power factor correction (PFC) circuits, DC-DC converters, plasma display panels, lighting ballasts, and motion control systems. The advanced QFET technology offers an improved figure of merit (FOM) through reduced on-resistance and switching losses compared to competing planar MOSFET devices.
Designed for efficient switching with low on-resistance. Enhanced power dissipation capacity enables robust performance. Wide operating temperature range for diverse industrial applications. Compact TO-220 package supports easy through-hole mounting.
Suitable for power supplies, motion control, and lighting ballast applications. This product is part of the onsemi MOSFET portfolio, known for reliable performance in power electronics. Explore more MOSFETs and related components in the Electronics & Electricals category on EnvMart for your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.2 A.
The maximum drain-source voltage rating is 200 V.
It has a maximum power dissipation rating of 45 W.
The typical gate charge is 19 nC.
The operating temperature range is from -55°C to 150°C.
This model comes in a TO-220 package type with 3 pins.
It supports through-hole mounting applications.
The dimensions are 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
The maximum drain-source resistance is 690 mΩ.
It is suitable for applications such as power supplies, DC-DC converters, PFC circuits, and motion control.
The maximum gate-source voltage rating is ±30 V.
This model uses a P-Channel type configuration.
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