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onsemi SupreMOS N-Channel MOSFET, 45.8 A, 600 V Enhancement 3-Pin TO-247 FCH47N60NF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FCH47N60NF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | SupreMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS Compliant |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45.8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 368W |
| Typical Gate Charge Qg @ Vgs | 121nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Rated for a maximum continuous drain current of 45.8 amperes.
- Designed for a maximum drain-source voltage of 600 volts.
- Features a low drain-source resistance of 65 milliohms for efficient operation.
- Supports an enhancement channel mode with typical gate charge of 121 nanocoulombs at Vgs.
- Constructed in a through-hole mount TO-247 package with three pins for robust electrical connection.
- Operates reliably across a wide temperature range from -55 °C to 150 °C.
- Maximum power dissipation of 368 watts to handle heavy loads.
- Forward voltage drop of 1.2 volts ensuring minimal power loss.
Product Description
onsemi FCH47N60NF is a SupreMOS N-Channel MOSFET designed for high efficiency and low switching losses. With a maximum drain current of 45.8 A and drain-source voltage rating of 600 V, this device supports demanding industrial and power management applications.
It features a low on-resistance of 65 mΩ and a typical gate charge of 121 nC, which enables excellent switching performance resulting in energy-efficient operation in power supplies and motor control circuits. The device operates in enhancement mode and is housed in a through-hole TO-247 package offering reliable connectivity through its 3-pin configuration.
Operating temperature range of -55 °C to 150 °C makes it suitable for harsh environmental conditions often encountered in industrial and automotive applications. The maximum power dissipation rating of 368 W allows it to withstand significant power loads.
Its forward voltage of 1.2 V reduces conduction losses while ensuring robust device performance. The compact package dimensions allow easy integration into electronic boards. This MOSFET is RoHS compliant, confirming it meets important environmental and safety requirements.
Applications include industrial power supplies, motor drives, switching regulators, and DC-DC converters in commercial and automotive systems. Rated for a maximum continuous drain current of 45.8 amperes. Designed for a maximum drain-source voltage of 600 volts.
Features a low drain-source resistance of 65 milliohms for efficient operation. Supports an enhancement channel mode with typical gate charge of 121 nanocoulombs at Vgs. Constructed in a through-hole mount TO-247 package with three pins for robust electrical connection.
Operates reliably across a wide temperature range from -55 °C to 150 °C. Maximum power dissipation of 368 watts to handle heavy loads. Forward voltage drop of 1.2 volts ensuring minimal power loss. Meets RoHS compliance for environmental and safety standards.
Compact dimensions: 20.82 mm height, 15.87 mm length, 4.82 mm width. Explore the broad range of onsemi power semiconductors and MOSFETs on EnvMart for industrial, laboratory, and automotive electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 45.8 amperes.
This MOSFET is designed for a maximum drain-source voltage of 600 volts.
It features a low drain-source resistance of 65 milliohms for efficient operation.
The typical gate charge at Vgs is 121 nanocoulombs.
It operates reliably across a wide temperature range from -55 °C to 150 °C.
The maximum power dissipation rating is 368 watts.
This model is housed in a through-hole TO-247 package with three pins.
It has a forward voltage drop of 1.2 volts, ensuring minimal power loss.
Yes, this MOSFET meets RoHS compliance for environmental and safety standards.
The dimensions are 20.82 mm in height, 15.87 mm in length, and 4.82 mm in width.
It is suitable for applications including industrial power supplies, motor drives, switching regulators, and DC-DC converters.
This device operates in enhancement mode.
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