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Infineon CoolMOS C7 N-Channel MOSFET, 46 A, 700 V Enhancement Mode, 4-Pin TO-247 IPZ65R045C7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.21mm |
| Length | 16.13mm |
| Model | IPZ65R045C7XKSA1 |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | CoolMOS C7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 227W |
| Typical Gate Charge Qg @ Vgs | 93nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 0.9V |
Key Features
- Features a low maximum drain-source resistance of 45 milliohms.
- Uses enhancement mode channel type for efficient power control.
- Supports a wide operating temperature range from -55°C to 150°C.
- Designed for through-hole mounting with 4 pins for reliable connections.
- Offers a maximum power dissipation rating of 227 watts for high-performance applications.
- Maximum gate-source voltage rating of -30 V to +30 V to ensure safe operation.
- Typical gate charge of 93 nanocoulombs to optimize switching performance.
- Compact dimension with length 16.13 mm, width 21.1 mm and height 5.21 mm.
Product Description
Infineon IPZ65R045C7XKSA1 is a CoolMOS C7 series N-Channel MOSFET designed for high-efficiency power switching applications. It features a maximum continuous drain current of 46 amps and can withstand a drain-source voltage up to 700 volts. Packaged in a 4-pin TO-247 through-hole configuration, this device offers robust mechanical and electrical performance.
This MOSFET operates in enhancement mode, delivering low on-resistance of 45 milliohms which reduces power losses and heat dissipation during operation. It supports a broad operating temperature range from -55°C to 150°C, enabling reliable use in demanding industrial and automotive environments.
The device's maximum power dissipation is rated at 227 watts, making it suitable for applications requiring efficient thermal management and high power throughput. The typical gate charge of 93 nanocoulombs and maximum gate-source voltage ratings of -30 V to +30 V enable stable and precise switching control.
Its compact dimensions of 16.13 mm length, 21.1 mm width, and 5.21 mm height provide ease of integration into electronic assemblies while maintaining robust durability. This MOSFET is ideal for power conversion, industrial automation, and electronic circuits where efficiency and reliability are critical.
Features low on-resistance for high efficiency. Provides high continuous drain current capability. Wide temperature range support for harsh environments. Reliable through-hole mount with 4-pin TO-247 package. High power dissipation rating for demanding applications.
Precise gate charge characteristics for optimal switching. Compact size for flexible integration. Suitable for automotive and industrial electronic systems.
This product is a part of Infineon's extensive CoolMOS portfolio, widely used in power electronics for robust and efficient energy management solutions. Browse the collection of semiconductor devices at EnvMart for additional technical components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 46 amps.
This unit can withstand a maximum drain-source voltage of 700 volts.
It features a maximum drain-source resistance of 45 milliohms, which helps reduce power losses.
The MOSFET supports a wide operating temperature range from -55°C to 150°C.
The maximum power dissipation rating for this device is 227 watts.
It has compact dimensions of 16.13 mm in length, 21.1 mm in width, and 5.21 mm in height.
It is packaged in a 4-pin TO-247 configuration for through-hole mounting.
The typical gate charge is 93 nanocoulombs, which optimizes switching performance.
This MOSFET has a maximum gate-source voltage rating of -30 V to +30 V.
It uses an N-channel type for efficient power control in enhancement mode.
This model is suitable for power conversion, industrial automation, and electronic circuits requiring efficient energy management.
The country of origin for this MOSFET is India.
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