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Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement Mode, 3-Pin TO-252, 110W Power Dissipation IRFR5305TRPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.39mm
Length 6.73mm
Model IRFR5305TRPBF
Width 6.22mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 31A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 63nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.3V

Key Features

  • Features low on-resistance for improved efficiency and reduced power loss.
  • Supports high maximum power dissipation of 110W for robust operation.
  • Designed for surface mount applications with a TO-252 package.
  • Operates reliably in extreme temperature ranges from -55°C to +175°C.
  • Facilitates rapid switching speeds suitable for power supplies and motor control.
  • Compliments automotive and industrial electronic circuits with high current handling.
  • Boasts enhanced switching precision via recommended gate drive circuits.
  • Compatible with standard PCB layouts ensuring seamless integration.

Product Description

Infineon IRFR5305TRPBF HEXFET Type P-Channel MOSFET is a high-performance semiconductor device engineered for power management applications requiring efficient switching and high current capability. With a maximum continuous drain current of 31 amperes and a maximum drain to source voltage rating of 55 volts, it offers robust operation suitable for demanding electronic environments.

This enhancement mode MOSFET features a TO-252 surface mount package with 3 pins, enabling compact and reliable PCB integration. Its low on-resistance (65 milliohms) significantly reduces conduction losses resulting in better overall efficiency and lower heat generation during operation.

Designed for industrial, automotive, and power supply applications, this device can operate over a wide temperature range from -55°C to +175°C, ensuring functionality under severe environmental conditions. It supports a maximum power dissipation of 110 watts, enabling use in high-power circuits and motor control systems.

The typical gate charge of 63 nanocoulombs and maximum gate-source voltage ratings of -20V to +20V facilitate quick and precise switching, which is critical for efficient power conversion and control. The device’s low forward voltage drop (-1.3V) further enhances circuit performance by minimizing energy loss during conduction.

Low on-resistance enhances efficiency and reduces power loss. High maximum power dissipation of 110W supports demanding applications. TO-252 package enables straightforward surface mount PCB installation. Wide operating temperature range from -55°C to +175°C ensures durability.

Optimized for power management, motor control, and automotive electronics. Quick switching speeds improve performance in power supplies. Robust electrical characteristics for reliable industrial use. Supports standard PCB layouts for ease of design integration.

Low forward voltage (-1.3V) reduces conduction losses efficiently. Recommended soldering techniques include vapor phase, infrared, and wave soldering to minimize thermal stress.

This MOSFET is part of Infineon's HEXFET family, known for advanced performance with efficient heat dissipation and electrical reliability. It is ideal for engineers and designers working on automation, power electronics, automotive, and industrial control applications.

Discover more Infineon semiconductor products and solutions in the Discrete Semiconductors category on EnvMart for enhanced industrial and electronic component sourcing.

Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement Mode, 3-Pin TO-252, 110W Power Dissipation IRFR5305TRPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 31 amperes.

It has a maximum drain-source voltage rating of 55 volts.

This MOSFET supports a maximum power dissipation of 110 watts, suitable for high-power applications.

The TO-252 package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.

It operates reliably over a wide temperature range from -55°C to +175°C.

The typical gate charge is 63 nanocoulombs.

The forward voltage drop is -1.3 volts, which helps reduce conduction losses.

This model is designed for surface mounting with a TO-252 package.

The maximum drain-source resistance is 65 milliohms, contributing to improved efficiency.

It is optimized for power management, motor control, and automotive electronics.

The maximum gate-source voltage ratings are -20V to +20V.

The TO-252 package features 3 pins.

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