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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR5305TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.3V |
Infineon IRFR5305TRPBF HEXFET Type P-Channel MOSFET is a high-performance semiconductor device engineered for power management applications requiring efficient switching and high current capability. With a maximum continuous drain current of 31 amperes and a maximum drain to source voltage rating of 55 volts, it offers robust operation suitable for demanding electronic environments.
This enhancement mode MOSFET features a TO-252 surface mount package with 3 pins, enabling compact and reliable PCB integration. Its low on-resistance (65 milliohms) significantly reduces conduction losses resulting in better overall efficiency and lower heat generation during operation.
Designed for industrial, automotive, and power supply applications, this device can operate over a wide temperature range from -55°C to +175°C, ensuring functionality under severe environmental conditions. It supports a maximum power dissipation of 110 watts, enabling use in high-power circuits and motor control systems.
The typical gate charge of 63 nanocoulombs and maximum gate-source voltage ratings of -20V to +20V facilitate quick and precise switching, which is critical for efficient power conversion and control. The device’s low forward voltage drop (-1.3V) further enhances circuit performance by minimizing energy loss during conduction.
Low on-resistance enhances efficiency and reduces power loss. High maximum power dissipation of 110W supports demanding applications. TO-252 package enables straightforward surface mount PCB installation. Wide operating temperature range from -55°C to +175°C ensures durability.
Optimized for power management, motor control, and automotive electronics. Quick switching speeds improve performance in power supplies. Robust electrical characteristics for reliable industrial use. Supports standard PCB layouts for ease of design integration.
Low forward voltage (-1.3V) reduces conduction losses efficiently. Recommended soldering techniques include vapor phase, infrared, and wave soldering to minimize thermal stress.
This MOSFET is part of Infineon's HEXFET family, known for advanced performance with efficient heat dissipation and electrical reliability. It is ideal for engineers and designers working on automation, power electronics, automotive, and industrial control applications.
Discover more Infineon semiconductor products and solutions in the Discrete Semiconductors category on EnvMart for enhanced industrial and electronic component sourcing.
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