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Infineon HEXFET P-Channel Power MOSFET 38A 100V Enhancement 3-Pin TO-263 IRF5210STRLPBF

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Infineon HEXFET P-Channel Power MOSFET 38A 100V Enhancement 3-Pin TO-263 IRF5210STRLPBF

Name: Infineon HEXFET P-Channel Power MOSFET 38A 100V Enhancement 3-Pin TO-263 IRF5210STRLPBF
Brand: Infineon
SKU: 379862
Price: 2.37 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.83mm
Length	10.67mm
Model	IRF5210STRLPBF
Width	9.65mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	38A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	60mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	170W
Typical Gate Charge Qg @ Vgs	150nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.6V

Key Features

This HEXFET power MOSFET provides low drain-source resistance of 60mΩ for efficient conduction.
Designed for enhancement mode operation, ensuring improved switching performance.
Capable of dissipating power up to 170W with maximum operating temperature of 150°C.
Compact dimensions of 10.67mm length, 9.65mm width, and 4.83mm height enable flexible PCB integration.
Handles typical gate charge of 150nC at Vgs with maximum gate-source voltage rating of -20V to +20V.
Operates reliably in temperatures from -55°C to 150°C, suitable for a variety of industrial environments.

Product Description

Infineon IRF5210STRLPBF is a HEXFET P-Channel power MOSFET, designed for high efficiency and robustness in power electronics applications. It supports a maximum continuous drain current of 38 amperes and a maximum drain-source voltage of 100 volts, housed in a 3-pin TO-263 package suitable for surface mounting.

This enhancement-mode device features a low on-resistance of 60 milliohms, minimizing conduction losses and improving overall system efficiency. Its power dissipation capability extends to 170 watts, enabling use in demanding industrial and electronic circuitry.

Thermal tolerance ranges from -55°C to an upper limit of 150°C, making it reliable in harsh environmental conditions common in industrial, automotive (non-AEC-Q101 compliant), and power management setups.

The device exhibits a typical gate charge of 150 nanocoulombs at the specified gate voltage levels, facilitating fast switching and reduced gate drive power consumption. Its compact dimensions allow for versatile circuit board layouts and effective thermal management.

Infineon's extensive MOSFET portfolio, including this model, is tailored to meet the demands of industrial electronics, power management, and semiconductor discrete device applications.

This HEXFET P-Channel MOSFET ensures low conduction loss and high switching speed. Robust package design supports high power dissipation and surface mounting compatibility. Wide operating temperature range suits diverse industrial and electronic environments.

Enhances system efficiency in power supplies, motor controls, and load switching. Compact form factor facilitates integration into space-constrained circuits. Ideal for applications requiring reliable high-current and voltage handling capability.

Explore other Power MOSFET options in the Infineon product range at EnvMart to find components tailored for your electronic and industrial design requirements.