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Toshiba N-Channel Enhancement MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72A12N1,S4X(S

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin China
Brand Toshiba
Height 15mm
Length 10mm
Model TK72A12N1,S4X(S
Width 4.5mm
Mount Type Through Hole
Series TK
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 72A
Maximum Drain Source Voltage Vds 120V
Maximum Drain Source Resistance Rds 4.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 45W
Typical Gate Charge Qg @ Vgs 130nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • The maximum continuous drain current (Id) is 72 A, allowing robust handling of heavy loads.
  • The device supports a maximum drain-source voltage (Vds) of 120 V, providing reliable operation in medium voltage circuits.
  • Mounting is via through-hole on a standard TO-220 package for ease of integration.
  • Maximum power dissipation (Pd) is rated at 45 W, suitable for thermal design considerations.
  • The device features a low maximum drain-source resistance (Rds) of 4.5 mΩ, enhancing efficiency in power switching applications.
  • Typical gate charge (Qg) at Vgs is 130 nC, balancing switching speed and drive requirements.
  • Maximum gate-source voltage (Vgs) is between -20 V to +20 V, allowing safe control voltage variation.
  • Designed for operation up to 150°C maximum temperature with dimensions of 15 mm height, 10 mm length, and 4.5 mm width.

Product Description

The Toshiba TK72A12N1,S4X(S is a high-performance N-Channel MOSFET transistor designed for power switching and amplification applications in electronic circuits. Featuring a 3-pin TO-220 through-hole package, it supports a maximum continuous drain current of 72 A and a maximum drain-source voltage of 120 V, making it suitable for industrial, automotive, and consumer electronics requiring efficient power management.

Its enhancement mode channel and a low maximum drain-source resistance of 4.5 mΩ ensure low conduction losses, contributing to energy-efficient designs. The device handles up to 45 W power dissipation, with a typical gate charge of 130 nC allowing for optimal switching speeds.

The operating temperature range extends up to 150°C, permitting reliable functionality under demanding thermal conditions. The transistor’s physical dimensions - 15 mm height, 10 mm length, and 4.5 mm width - make it compatible with various PCB layouts and heat sink options.

Additional features include a maximum gate-source voltage range from -20 V to +20 V, and a forward voltage of approximately -1.2 V, ensuring robust gate control and stable conduction characteristics.

This MOSFET is ideal for industrial power control circuits, laboratory equipment, HVAC systems, automotive electronics, and commercial manufacturing processes requiring dependable discrete semiconductor components.

The maximum continuous drain current is 72 A, supporting high load demands. The maximum drain-source voltage of 120 V accommodates medium voltage applications. The TO-220 package with through-hole mounting facilitates easy installation and heat dissipation.

Power dissipation capability up to 45 W supports thermal reliability. Low drain-source resistance of 4.5 mΩ improves efficiency by reducing conduction losses. Gate charge of 130 nC balances switching speed and control effort.

Gate-source voltage limit from -20 V to +20 V ensures safe operation margins. Compact dimensions allow flexible PCB design integration. Capable of operating at temperatures up to 150°C for demanding environments.

Set within Toshiba's TK series, this MOSFET supports diverse industrial and commercial electronic applications, inviting engineers to explore the wide range of semiconductor solutions on EnvMart.

Toshiba N-Channel Enhancement MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72A12N1,S4X(S
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Frequently Asked Questions

The maximum continuous drain current (Id) for this model is 72 A, allowing it to handle heavy loads effectively.

The maximum drain-source voltage (Vds) supported by this MOSFET is 120 V, suitable for medium voltage applications.

This model has a maximum power dissipation rating of 45 W, which supports thermal reliability in various applications.

The dimensions of the TO-220 package are 15 mm in height, 10 mm in length, and 4.5 mm in width.

The maximum gate-source voltage (Vgs) range for this model is between -20 V and +20 V, allowing for safe control voltage variation.

The typical gate charge (Qg) at Vgs for this MOSFET is 130 nC, balancing switching speed and drive requirements.

This model utilizes through-hole mounting, which facilitates easy integration into circuits.

The maximum operating temperature for this MOSFET is 150°C, allowing it to function reliably in demanding thermal conditions.

The maximum drain-source resistance (Rds) is rated at 4.5 mΩ, which enhances efficiency in power switching applications.

This MOSFET is suitable for industrial power control circuits, automotive electronics, HVAC systems, and laboratory equipment.

This model features an N-channel type, which is commonly used for power switching and amplification applications.

The forward voltage (Vf) for this MOSFET is approximately -1.2 V, ensuring stable conduction characteristics.

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