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| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK72A12N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 72A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
The Toshiba TK72A12N1,S4X(S is a high-performance N-Channel MOSFET transistor designed for power switching and amplification applications in electronic circuits. Featuring a 3-pin TO-220 through-hole package, it supports a maximum continuous drain current of 72 A and a maximum drain-source voltage of 120 V, making it suitable for industrial, automotive, and consumer electronics requiring efficient power management.
Its enhancement mode channel and a low maximum drain-source resistance of 4.5 mΩ ensure low conduction losses, contributing to energy-efficient designs. The device handles up to 45 W power dissipation, with a typical gate charge of 130 nC allowing for optimal switching speeds.
The operating temperature range extends up to 150°C, permitting reliable functionality under demanding thermal conditions. The transistor’s physical dimensions - 15 mm height, 10 mm length, and 4.5 mm width - make it compatible with various PCB layouts and heat sink options.
Additional features include a maximum gate-source voltage range from -20 V to +20 V, and a forward voltage of approximately -1.2 V, ensuring robust gate control and stable conduction characteristics.
This MOSFET is ideal for industrial power control circuits, laboratory equipment, HVAC systems, automotive electronics, and commercial manufacturing processes requiring dependable discrete semiconductor components.
The maximum continuous drain current is 72 A, supporting high load demands. The maximum drain-source voltage of 120 V accommodates medium voltage applications. The TO-220 package with through-hole mounting facilitates easy installation and heat dissipation.
Power dissipation capability up to 45 W supports thermal reliability. Low drain-source resistance of 4.5 mΩ improves efficiency by reducing conduction losses. Gate charge of 130 nC balances switching speed and control effort.
Gate-source voltage limit from -20 V to +20 V ensures safe operation margins. Compact dimensions allow flexible PCB design integration. Capable of operating at temperatures up to 150°C for demanding environments.
Set within Toshiba's TK series, this MOSFET supports diverse industrial and commercial electronic applications, inviting engineers to explore the wide range of semiconductor solutions on EnvMart.
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