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DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement Mode 3-Pin SOT-23 DMG2305UX-13

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMG2305UX-13
Width 1.4mm
Mount Type Surface
Series DMG
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.3A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 10.2nC
Maximum Gate Source Voltage Vgs -8, +8V

Key Features

  • Maximum continuous drain current of 3.3 amperes ensures efficient power handling.
  • Operates with a maximum drain-source voltage of 20 volts for versatile applications.
  • Compact SOT-23 surface mount package with 3 pins for easy PCB integration.
  • Low maximum drain-source resistance of 200 milliohms supports energy efficiency.
  • Enhancement channel mode device suitable for a variety of switching tasks.
  • Rated maximum power dissipation of 1.4 watts for reliable operation at high temperatures.
  • Operates over a wide temperature range from -55°C to 150°C for robust industrial use.
  • Typical gate charge of 10.2 nanocoulombs at specified gate voltage enhances switching speed.

Product Description

DiodesZetex DMG2305UX-13 is a P-Channel enhancement mode MOSFET transistor designed for efficient and reliable switching and amplification in electronic circuits. With a maximum continuous drain current of 3.3 A and drain-source voltage rating of 20 V, this device is suitable for various power electronic applications including automotive and industrial sectors.

This MOSFET is housed in a compact 3-Pin SOT-23 surface mount package, measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height, allowing easy integration into densely packed PCB designs. The device features a low maximum drain-source resistance of 200 milliohms, minimizing power loss and heat generation during operation.

The transistor is optimized for switching speeds with a typical gate charge of 10.2 nC at the recommended gate voltage levels. Its robust operational temperature range from -55°C to 150°C makes it well-suited for challenging environments. The device also conforms to the automotive AEC-Q101 standard, elevating its reliability for automotive electronics use.

Key features include a max power dissipation of 1.4 W, ensuring the MOSFET operates reliably under load conditions. The maximum gate-source voltage rating of -8 V to +8 V prevents device damage from voltage spikes.

Maximum continuous drain current of 3.3 A supports high load capacity. Voltage rating of 20 V suitable for common low voltage power switching. Low on-resistance preserves energy efficiency and reduces heat. Stable performance over a wide temperature range (-55° to 150°C).

Automotive AEC-Q101 standard compliance assures quality and durability. Compact surface mount package aids modern circuit designs.

This P-Channel MOSFET is ideal for use in power management, switching regulators, and electronic control modules within industrial, automotive, and consumer electronics sectors. For users requiring reliable MOSFET transistors with confirmed automotive standard compliance and compact packaging, the DMG2305UX-13 offers a robust solution.

Explore the full range of MOSFETs and semiconductor components on EnvMart for your project and industrial needs.

DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement Mode 3-Pin SOT-23 DMG2305UX-13
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.3 amperes, which supports high load capacity in various applications.

It has a maximum drain-source voltage rating of 20 volts, making it suitable for low voltage power switching applications.

This model is housed in a compact SOT-23 surface mount package, measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The rated maximum power dissipation is 1.4 watts, ensuring reliable operation under load conditions.

The typical gate charge at specified gate voltage levels is 10.2 nanocoulombs, which enhances switching speed.

It operates over a wide temperature range from -55°C to 150°C, making it suitable for robust industrial applications.

This model features a P-channel enhancement mode, suitable for a variety of switching tasks.

The maximum gate-source voltage rating is -8 V to +8 V, which helps prevent device damage from voltage spikes.

It has a low maximum drain-source resistance of 200 milliohms, which supports energy efficiency during operation.

Yes, this model conforms to the automotive AEC-Q101 standard, ensuring its reliability for automotive electronics use.

This MOSFET has a pin count of 3, facilitating easy integration into circuit designs.

It is ideal for use in power management, switching regulators, and electronic control modules within industrial, automotive, and consumer electronics sectors.

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