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DiodesZetex N-Channel Enhancement MOSFET 7.5 A Drain Current 30 V Vds 6-Pin TSOT Package DMG6402LVT-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | DMG6402LVT-7 |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | DMG |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.75W |
| Typical Gate Charge Qg @ Vgs | 11.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Provides a maximum continuous drain current of 7.5 A for efficient power handling.
- Operates at a maximum drain-source voltage of 30 V suitable for medium power circuits.
- Features a compact 6-pin TSOT surface mount package with dimensions 2.9 mm x 1.6 mm x 0.9 mm.
- Low maximum drain-source resistance of 42 milliohms reduces conduction losses.
- Supports operation from -55°C to 150°C automotive grade temperature range.
- Offers typical gate charge of 11.4 nC at specified gate-source voltage for fast switching.
- Designed as an enhancement mode N-channel MOSFET with ±20 V maximum gate-source voltage.
- Maximum power dissipation rated at 1.75 W ensuring reliable thermal performance.
Product Description
DiodesZetex DMG6402LVT-7 is an N-Channel Enhancement MOSFET designed for efficient switching and amplification applications in electronic circuits. Rated for a continuous drain current of 7.5 A and a maximum drain-source voltage of 30 V, this device targets power control in automotive, industrial, and consumer electronics.
The MOSFET is housed in a compact 6-Pin TSOT surface-mount package measuring 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height, facilitating space-saving PCB design. It features a low on-resistance of 42 milliohms to minimize conduction losses and a typical gate charge of 11.4 nanocoulombs supporting high-speed switching operations.
Operating temperature ranges from -55°C to 150°C and compliance with automotive standard AEC-Q101 make this device suitable for harsh environments and automotive-grade applications.
Additional features include a gate-source voltage rating of -20 V to +20 V and a maximum power dissipation of 1.75 W to ensure reliable performance under demanding electrical loads.
This MOSFET is ideal for use in industrial power control units, automotive electronics systems, switching power supplies, and other applications requiring efficient, reliable high-current switching.
Maximum continuous drain current of 7.5 A. Maximum drain-source voltage of 30 V. Low drain-source resistance of 42 milliohms. Compact 6-Pin TSOT surface mount package. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 11.4 nC for fast switching. Enhancement mode channel operation. Maximum gate-source voltage ±20 V. Complies with automotive standard AEC-Q101. Explore a wide range of semiconductor components and MOSFET devices in the Electronics & Electricals category on EnvMart for industrial, automotive, and consumer applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.5 A.
It can operate at a maximum drain-source voltage of 30 V.
The maximum drain-source resistance is 42 milliohms, which helps reduce conduction losses.
The TSOT package measures 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height.
The typical gate charge is 11.4 nanocoulombs at the specified gate-source voltage.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is rated at 1.75 W.
This model complies with the automotive standard AEC-Q101.
It is designed as an enhancement mode N-channel MOSFET.
The maximum gate-source voltage is rated at ±20 V.
This device is designed for surface mount applications.
It is suitable for applications in industrial power control units, automotive electronics systems, and switching power supplies.
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