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Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement Mode, 4-Pin SOT-223 BSP170PH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.6mm
Length 6.5mm
Model BSP170PH6327XTSA1
Width 3.5mm
Mount Type Surface
Series SIPMOS
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 1.9A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 300mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 10nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.1V

Key Features

  • Supports a maximum continuous drain current of 1.9 A for steady load handling.
  • Maximum drain-source voltage rating is 60 V enabling robust high-voltage switching.
  • Features a low on-resistance of 300 milliohms to minimize conduction losses.
  • Typical gate charge of 10 nC promotes efficient switching performance.
  • Maximum power dissipation of 1.8 W provides moderate thermal management capability.
  • Wide operating temperature range from -55°C to 150°C suitable for automotive and industrial environments.
  • Complies with AEC-Q101 automotive standard ensuring reliability in vehicle systems.
  • Compact SOT-223 surface-mount package with 4 pins optimized for PCB assembly.

Product Description

Infineon BSP170PH6327XTSA1 is a SIPMOS type P-Channel MOSFET tailored for surface-mount power switching requiring reliable performance under automotive and industrial conditions. This device supports a continuous drain current of 1.9 amperes and withstands drain-source voltages up to 60 volts. Packaged in a compact 4-pin SOT-223 with a height of 1.6 mm, length of 6.5 mm, and width of 3.5 mm, it is ideal for dense PCB layouts.

This MOSFET operates in enhancement mode with a typical gate charge of 10 nanocoulombs, enabling efficient and precise drive control. It features a low maximum drain-source resistance of 300 milliohms, reducing conduction losses and enhancing operational efficiency. The maximum power dissipation rating of 1.8 watts supports moderate thermal loads, while the device operates reliably across a broad temperature range from -55°C to 150°C, suitable for demanding automotive and industrial environments.

Conforming to the AEC-Q101 standard, it meets the quality and reliability requisites for automotive electronics. The device’s maximum gate-source voltage rating of ±20 volts must be observed to ensure device integrity and longevity.

Typical use cases for the BSP170PH6327XTSA1 include load switching in automotive electronics, battery management, power rail control, DC-DC conversion driver stages, and polarity protection in vehicle systems. Its surface-mount SOT-223 form factor and 4-pin configuration facilitate easy PCB assembly and integration into compact power modules.

Supports 1.9 A maximum continuous drain current. 60 V maximum drain-source voltage for robust high-voltage operation. Low on-resistance of 300 mΩ to optimize conduction efficiency. 10 nC typical gate charge for effective switching control.

1.8 W maximum power dissipation handles moderate thermal conditions. Wide operating temperature range from -55°C to 150°C. Meets stringent AEC-Q101 automotive qualification standards. Compact 4-pin SOT-223 surface-mount package.

Designed for automotive load switching and power management applications. Enhancement mode P-Channel MOSFET for negative gate voltage operation.

EnvMart offers this Infineon MOSFET suitable for high-reliability applications in industrial, automotive, and commercial electronic systems. Browse further in our Semiconductor MOSFET category for more related components from Infineon and other leading manufacturers.

Infineon SIPMOS Type P-Channel MOSFET, 1.9 A, 60 V Enhancement Mode, 4-Pin SOT-223 BSP170PH6327XTSA1
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