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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP170PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Infineon BSP170PH6327XTSA1 is a SIPMOS type P-Channel MOSFET tailored for surface-mount power switching requiring reliable performance under automotive and industrial conditions. This device supports a continuous drain current of 1.9 amperes and withstands drain-source voltages up to 60 volts. Packaged in a compact 4-pin SOT-223 with a height of 1.6 mm, length of 6.5 mm, and width of 3.5 mm, it is ideal for dense PCB layouts.
This MOSFET operates in enhancement mode with a typical gate charge of 10 nanocoulombs, enabling efficient and precise drive control. It features a low maximum drain-source resistance of 300 milliohms, reducing conduction losses and enhancing operational efficiency. The maximum power dissipation rating of 1.8 watts supports moderate thermal loads, while the device operates reliably across a broad temperature range from -55°C to 150°C, suitable for demanding automotive and industrial environments.
Conforming to the AEC-Q101 standard, it meets the quality and reliability requisites for automotive electronics. The device’s maximum gate-source voltage rating of ±20 volts must be observed to ensure device integrity and longevity.
Typical use cases for the BSP170PH6327XTSA1 include load switching in automotive electronics, battery management, power rail control, DC-DC conversion driver stages, and polarity protection in vehicle systems. Its surface-mount SOT-223 form factor and 4-pin configuration facilitate easy PCB assembly and integration into compact power modules.
Supports 1.9 A maximum continuous drain current. 60 V maximum drain-source voltage for robust high-voltage operation. Low on-resistance of 300 mΩ to optimize conduction efficiency. 10 nC typical gate charge for effective switching control.
1.8 W maximum power dissipation handles moderate thermal conditions. Wide operating temperature range from -55°C to 150°C. Meets stringent AEC-Q101 automotive qualification standards. Compact 4-pin SOT-223 surface-mount package.
Designed for automotive load switching and power management applications. Enhancement mode P-Channel MOSFET for negative gate voltage operation.
EnvMart offers this Infineon MOSFET suitable for high-reliability applications in industrial, automotive, and commercial electronic systems. Browse further in our Semiconductor MOSFET category for more related components from Infineon and other leading manufacturers.
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