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onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V Enhancement, 8-Pin WDFN FDMC86102LZ

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onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V Enhancement, 8-Pin WDFN FDMC86102LZ

Name: onsemi PowerTrench N-Channel MOSFET, 22 A, 100 V Enhancement, 8-Pin WDFN FDMC86102LZ
Brand: onsemi
SKU: 374397
Price: 1.61 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.75mm
Length	3.3mm
Model	FDMC86102LZ
Width	3.3mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	WDFN
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	22A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	41W
Typical Gate Charge Qg @ Vgs	15.3nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

This device features an 8-pin WDFN package for compact mounting.
It supports a maximum continuous drain current of 22 amperes.
The MOSFET has a maximum drain to source voltage of 100 volts.
Its maximum drain-source resistance is 40 milliohms, enabling low conduction losses.
Operates within a temperature range from -55°C to 150°C for robust industrial applications.
Enhancement mode channel operation with typical gate charge of 15.3 nanocoulombs at Vgs.
Rated for a maximum gate source voltage of -20 to +20 volts.
Maximum power dissipation of 41 watts supports moderate thermal loads.

Product Description

The onsemi FDMC86102LZ is a PowerTrench® N-Channel enhancement mode MOSFET designed for efficient power switching and management applications. It is supplied in a compact 8-pin WDFN package measuring 3.3 mm by 3.3 mm by 0.75 mm, suitable for surface mount installation on modern printed circuit boards.

This device supports a maximum continuous drain current of 22 A and features a drain to source voltage rating of 100 V, making it apt for medium power applications in industrial, consumer electronics, and automotive systems that require reliable switching performance.

Typical gate charge is measured at 15.3 nC at the gate-to-source voltage, ensuring fast switching with minimal drive power. The maximum drain-source resistance of 40 milliohms minimizes conduction losses, enhancing energy efficiency in power management circuits.

Operating temperature range spans from minus 55°C up to a maximum of 150°C, allowing dependable operation under harsh environmental conditions. The device tolerates a maximum gate-source voltage of -20 V to +20 V, ensuring robust gate oxide integrity.

Its 41-watt maximum power dissipation provides thermal resilience for continuous operation at moderate power levels. This parameter helps engineers confidently design cooling solutions aligned with system requirements.

The FDMC86102LZ is widely used in applications such as DC-DC converters, power supplies, motor control circuits, automotive electronics, and general-purpose switching within semiconductor discrete component segments.

It complies with standard semiconductor manufacturing and quality control processes ensuring consistency and long-term reliability in demanding environments. This MOSFET offers efficient power switching with low on-resistance.

The compact WDFN surface-mount package supports high-density PCB layouts. Wide operating temperature suitable for industrial and automotive usage. Robust maximum voltage and current ratings fit a variety of applications.

High power dissipation capacity enables continuous operation. Compatible with automated pick-and-place manufacturing methods.

Explore additional onsemi PowerTrench MOSFET products to find components optimized for your power management needs in industrial, electronics, automotive, and laboratory setups through EnvMart.