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DiodesZetex Full Bridge 4 Type P and Type N-Channel Enhancement MOSFET, 7.8 A, 30 V, 8-Pin SOIC DMHC3025LSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMHC3025LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 7.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Full Bridge |
Key Features
- Continuous drain current rating of 7.8 amperes for high current demands.
- Maximum drain-source voltage of 30 volts suitable for low voltage power switching.
- Enhancement mode channel with 80 milliohms maximum drain-source resistance for efficiency.
- Compact SOIC package with 8 pins enabling easy PCB mounting.
- Maximum power dissipation of 1.5 watts allowing effective heat management.
- Wide operating temperature range from -55°C to +150°C for reliable industrial use.
- Typical gate charge of 5.4 nano-Coulombs ensuring fast switching performance.
- Compliant with automotive standard AEC-Q101 for automotive electronics and industrial reliability.
Product Description
DiodesZetex DMHC3025LSD-13 is a full bridge complementary enhancement MOSFET device comprising 4 Type P and Type N channel transistors integrated in a compact 8-pin SOIC surface-mount package. Designed for power switching and digital logic applications, this MOSFET provides robust performance with continuous drain current up to 7.8 amperes and drain-source voltage rating of 30 volts. The device exhibits low on-resistance of 80 milliohms, facilitating efficient conduction and reduced power losses.
This device operates efficiently within a wide industrial temperature range from -55°C to +150°C, maintaining stability in harsh environments for demanding applications. Its typical gate charge of 5.4 nano-Coulombs supports high-speed switching suitable for automotive and industrial electronic designs. The package height of 1.5 mm, length of 4.95 mm, and width of 3.95 mm provides a balance between compactness and thermal performance.
The DMHC3025LSD-13 meets stringent standards and certifications including UL 94V-0 flammability rating, military standard MIL-STD-202 for environmental testing, RoHS compliance for hazardous substance restrictions, automotive AEC-Q101 qualification, and J-STD-020 soldering process standards, ensuring industry-wide acceptance and reliability.
This MOSFET full bridge configuration integrates four transistor elements per chip, providing versatile usage scenarios in circuits requiring bidirectional control or H-bridge motor driver applications. It is suited for automotive electronics, industrial control systems, and other commercial power management requirements.
Continuous drain current: 7.8 A. Drain-source voltage: 30 V. Package type: SOIC, 8-pin surface mount. On-resistance (max): 80 mΩ. Power dissipation max: 1.5 W. Operating temperature range: -55°C to +150°C. Typical gate charge: 5.4 nC.
Certifications: UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020. Transistor configuration: Full Bridge, 4 elements per chip.
This product is an ideal choice for designers seeking a reliable, compact MOSFET full bridge component capable of handling moderate power loads under demanding environmental conditions. Browse more discrete semiconductor solutions and MOSFET devices in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.8 amperes.
The maximum drain-source voltage rating is 30 volts, making it suitable for low voltage power switching applications.
The typical gate charge is 5.4 nano-Coulombs, which supports fast switching performance.
The maximum drain-source resistance is 80 milliohms, facilitating efficient conduction.
It operates efficiently within a wide temperature range from -55°C to +150°C.
The package dimensions are 1.5 mm in height, 4.95 mm in length, and 3.95 mm in width.
This model features a full bridge configuration with four transistor elements per chip.
It complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.
This MOSFET is certified with UL 94V-0, MIL-STD-202, RoHS, and J-STD-020 standards.
The maximum power dissipation is 1.5 watts, allowing for effective heat management during operation.
This model uses surface mount technology, specifically in an 8-pin SOIC package.
It is suitable for power switching, digital logic applications, automotive electronics, and industrial control systems.
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