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DiodesZetex Full Bridge 4 Type P, Type N-Channel MOSFET, 7.8 A, 30 V Enhancement Mode, 8-Pin SOIC DMHC3025LSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMHC3025LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 7.8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Full Bridge |
Key Features
- Full bridge MOSFET transistor configuration suitable for power switching applications.
- Compact 8-pin SOIC package for surface mount technology.
- Maximum power dissipation of 1.5W ensures efficient thermal performance.
- Operating temperature range from -55°C to +150°C for reliable use in harsh environments.
- Low maximum drain-source resistance of 80mΩ reduces conduction losses.
- Typical gate charge of 5.4nC at Vgs enhances switching performance.
- Fully compliant with automotive standard AEC-Q101 and RoHS directives.
- Maximum gate-source voltage of ±20 V supports robust gate control.
Product Description
DiodesZetex DMHC3025LSD-13 is a Full Bridge 4 Type P and Type N-Channel Enhancement Mode MOSFET designed for robust electronic switching with a maximum continuous drain current of 7.8 A and a maximum drain-source voltage of 30 V. This device is offered in an 8-pin SOIC surface mount package, providing compact, reliable integration in power electronics.
Capable of handling a maximum power dissipation of 1.5 watts and operating reliably within a temperature range of -55°C to +150°C, the DMHC3025LSD-13 is suitable for a broad array of industrial, automotive, and commercial applications including motor control, power management, and signal switching.
The device achieves efficient operation with a low maximum drain-source resistance of 80 milliohms and a typical gate charge of 5.4 nanocoulombs, enabling fast switching speeds and low conduction losses. Its gate-source voltage tolerance of ±20 V allows flexible gate drive conditions, enhancing circuit design robustness.
Manufactured to meet multiple quality and reliability standards including UL 94V-0, MIL-STD-202, RoHS compliance, AEC-Q101 automotive standard, and J-STD-020, this MOSFET meets stringent industry requirements. The chip contains four individual MOSFET elements configured in a full bridge arrangement, supporting complex circuit implementations.
The physical dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height allow for space-efficient PCB layouts. This product is ideal for use in electronics manufacturing, automotive control systems, power converters, and industrial automation where reliable high-performance MOSFETs are essential.
Full bridge MOSFET transistor configuration suitable for power switching applications. Compact 8-pin SOIC package for surface mount technology. Maximum power dissipation of 1.5W ensures efficient thermal performance. Operating temperature range from -55°C to +150°C for reliable use in harsh environments.
Low maximum drain-source resistance of 80mΩ reduces conduction losses. Typical gate charge of 5.4nC at Vgs enhances switching performance. Fully compliant with automotive standard AEC-Q101 and RoHS directives. Dimensions: length 4.95mm, width 3.95mm, height 1.5mm.
Maximum gate-source voltage of ±20 V supports robust gate control. Contains 4 MOSFET elements per chip to enable versatile circuit design. Explore the extensive range of semiconductor products at EnvMart for all your industrial, automotive, and electronic assembly needs.
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Frequently Asked Questions
The maximum continuous drain current for the DMHC3025LSD-13 is 7.8 A.
This model has a maximum drain-source voltage rating of 30 V.
The operating temperature range is from -55°C to +150°C, making it suitable for harsh environments.
The maximum power dissipation for the DMHC3025LSD-13 is 1.5 W.
The dimensions of the DMHC3025LSD-13 are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
It comes in an 8-pin SOIC surface mount package.
The maximum gate-source voltage is ±20 V.
The typical gate charge at Vgs is 5.4 nC.
There are four individual MOSFET elements per chip in the DMHC3025LSD-13.
It is compliant with UL 94V-0, MIL-STD-202, RoHS, AEC-Q101, and J-STD-020 standards.
The maximum drain-source resistance is 80 mΩ.
This device utilizes a full bridge transistor configuration.
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