DiodesZetex P-Channel MOSFET 8.6 A 40 V Enhancement Surface Mount TO-252 Package 3-Pin DMP4025LK3-13

DiodesZetex DMP4025LK3-13 is a P-Channel MOSFET designed for surface mounting in electronic circuits requiring efficient power switching. It supports a maximum continuous drain current of 8.6 amps and a maximum drain-source voltage of 40 volts, enclosed in a TO-252 three-pin package optimized for compact electronic assemblies.

The device operates in enhancement mode and boasts a maximum power dissipation of 2.78 watts, making it suitable for handling moderate power levels in power management, switching regulators, and automotive electronics.

It features a wide temperature operating range from -55 to 150 degrees Celsius, enabling reliable operation in both industrial and automotive environments. The maximum gate-source voltage of ±20 volts provides flexibility for various gate drive configurations.

The low maximum Rds(on) of 45 milliohms translates to reduced conduction losses, enhancing efficiency in switching applications. Moreover, its typical gate charge of 33.7 nanocoulombs aids fast switching with minimal losses, beneficial in high-frequency designs.

Dimensionally, the MOSFET measures 6.7 mm in length, 6.2 mm in width, and 2.26 mm in height, allowing dense PCB layouts. Compliant with the AEC-Q101 automotive standard, the DMP4025LK3-13 is suitable for automotive-grade circuits requiring ruggedness and quality assurance.

This MOSFET is widely applicable in industrial control systems, automotive electronics, and power management for consumer electronics. It enhances circuit efficiency while delivering robust performance in demanding conditions.

This MOSFET operates in enhancement mode providing efficient switching. The package features a compact TO-252 form factor with 3 pins for surface mounting. Maximum power dissipation rating of 2.78 watts supports moderate power applications.

Wide operating temperature range from -55°C to 150°C ensures reliability under harsh conditions. Maximum gate-source voltage rating is ±20 V for robust gate control. Has a low maximum drain-source resistance of 45 milliohms aiding low conduction losses.

Typical gate charge of 33.7 nC reduces switching losses in high-frequency circuits. Complies with automotive standard AEC-Q101, suitable for automotive and industrial electronics. Physical dimensions are 6.7 mm length, 6.2 mm width, and 2.26 mm height for compact PCB layouts.

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