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DiodesZetex Isolated 2 N-Channel Power MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage DMN65D8LDW-7

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DiodesZetex Isolated 2 N-Channel Power MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage DMN65D8LDW-7

Name: DiodesZetex Isolated 2 N-Channel Power MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage DMN65D8LDW-7
Brand: DiodesZetex
SKU: 377805
Price: 0.1 USD
Availability: InStock

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Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1mm
Length	2.2mm
Model	DMN65D8LDW-7
Width	1.35mm
Mount Type	Surface
Maximum Operating Temperature	+150°C
Package Type	SC-88
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, J-STD-020
Pin Count	6
Number of Elements per Chip	2
Automotive Standard	AEC-Q101, AEC-Q200, AEC-Q100
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Typical Gate Charge Qg @ Vgs	0.43nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.8V
Transistor Configuration	Isolated

Key Features

Operates as an isolated dual N-Channel power MOSFET in a surface-mount SC-88 package.
Supports a maximum continuous drain current of 200 mA for efficient power handling.
Rated for maximum drain-source voltage of 60 V with low drain-source resistance of 8 ohms.
Features enhancement mode operation with gate-source voltage range of -20 to +20 V.
Ensures low forward voltage of 0.8 V for reduced conduction losses.
Handles maximum power dissipation of 400 mW under industrial operating conditions.
Functions reliably across a temperature range from -55°C up to +150°C.
Certified to meet RoHS, UL 94V-0, MIL-STD-202, AEC-Q101, and J-STD-020 standards.

Product Description

DiodesZetex DMN65D8LDW-7 is a high-performance isolated dual N-Channel power MOSFET tailored for demanding electronic and industrial applications. It supports a maximum continuous drain current of 200 mA and has a rated maximum drain-source voltage of 60 V, making it suitable for low-power switching tasks.

This device is housed in a compact 6-pin SC-88 surface-mount package, with dimensions measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height. The enhancement mode channel type allows it to switch efficiently with a gate-source voltage range of -20 V to +20 V.

The DMN65D8LDW-7 offers a low forward voltage of 0.8 V and maximum drain-source resistance (Rds) of 8 ohms, enabling minimal conduction losses and improved thermal efficiency. It can safely dissipate up to 400 mW of power and operates reliably across a wide temperature range from -55°C to +150°C, which meets the demands of automotive and industrial environments.

Quality and reliability are ensured with certifications including RoHS compliance, UL 94V-0 flammability rating, MIL-STD-202, AEC-Q101, and J-STD-020 standards. The device contains two elements per chip and satisfies automotive standards AEC-Q101, AEC-Q200, and AEC-Q100, emphasizing its suitability for automotive electronics.

Isolated dual N-Channel Power MOSFET in SC-88 package. Maximum continuous drain current of 200 mA for reliable operation. Drain-source voltage rated at 60 V with low Rds of 8 Ω. Enhancement mode device with maximum gate-source voltage of ±20 V.

Operating temperature range from -55°C to +150°C for durability. Complies with automotive and industrial standards.

This MOSFET is ideal for usage in automotive systems, industrial control circuits, and general power switching applications where compactness and efficiency are critical. Explore our Electronics & Electricals category for more semiconductor components and Power MOSFETs by DiodesZetex and other reputable brands on EnvMart.