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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DMP1045U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 15.8nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
DiodesZetex DMP1045U-7 is a P-Channel MOSFET transistor optimized for electronic and automotive applications demanding precise switching and power handling capabilities. This device supports a maximum continuous drain current of 5.2 A and a maximum drain-source voltage of 12 V, packaged conveniently in a compact 3-pin SOT-23 format for easy surface mounting.
The enhancement mode channel and low on-resistance of 75 mΩ reduce conduction losses substantially, enhancing efficiency in power circuits. Its capability to dissipate up to 1.3 W power and withstand operating temperatures from -55°C to 150°C make it suitable for harsh automotive environments.
With a typical gate charge of 15.8 nC and maximum gate-source voltage of ±8 V, the DMP1045U-7 enables fast switching response, essential for high-frequency applications. The physical footprint - 3 mm length, 1.4 mm width, and 1.1 mm height - allows integration into densely packed circuit boards.
This MOSFET meets the AEC-Q101 automotive standard, ensuring dependable reliability and consistent performance in automotive systems. Its forward voltage of -1.2 V supports effective load switching and power management.
The compact and reliable DiodesZetex DMP1045U-7 MOSFET is ideal for use in automotive electronics, power management circuits, and other industrial semiconductor applications requiring robust, efficient, and compact switching devices.
The MOSFET operates in enhancement mode ensuring efficient switching performance. Low drain-source resistance of 75 mΩ minimizes conduction loss. Maximum power dissipation is rated at 1.3 W for reliable thermal management.
Operating temperature range spans from -55°C to 150°C, suitable for automotive applications. Typical gate charge of 15.8 nC allows for fast switching at Vgs of ±8 V. Compact dimensions: length 3 mm, width 1.4 mm, and height 1.1 mm support space-constrained designs.
Compliance with automotive standard AEC-Q101 ensures quality and reliability. Forward voltage drop is -1.2 V, supporting efficient performance in discrete semiconductor circuits. Explore the complete range of MOSFETs and semiconductor products to meet your design and production requirements at EnvMart.
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