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DiodesZetex P-Channel Enhancement MOSFET 6 A 30 V 8-Pin SOP DMP3056LSS-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5.3mm |
| Model | DMP3056LSS-13 |
| Width | 4.1mm |
| Mount Type | Surface |
| Series | DMP3056LSS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 13.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Compact 8-pin SOP package offers surface mount capability.
- Maximum power dissipation of 2.5 W supports robust operation.
- Operating temperature ranges from -55°C up to 150°C for reliability.
- Low typical gate charge of 13.7 nC enables high-speed switching.
- Maximum drain-source resistance of 65 mΩ ensures low conduction losses.
- Supports gate-source voltages from -20 V to +20 V.
- Complies with automotive standard AEC-Q101 for automotive applications.
Product Description
DiodesZetex DMP3056LSS-13 is a P-Channel Enhancement MOSFET designed for discrete semiconductor applications requiring reliable performance with a maximum continuous drain current of 6 A and a maximum drain-source voltage of 30 V. Packaged in a compact 8-pin SOP surface-mount format, this device is ideal for efficient power switching and amplification in electronic and power management circuits.
The device operates over a wide temperature range from -55°C to 150°C, ensuring suitability for demanding environments including automotive applications where it meets the AEC-Q101 standard. Its low typical gate charge of 13.7 nC enables fast switching speeds, while the maximum drain-source resistance of 65 milliohms helps reduce power loss during conduction.
This MOSFET supports gate-source voltages from -20 V to +20 V and features a maximum power dissipation rating of 2.5 W, making it suitable for compact, high-efficiency designs. With dimensions measuring 5.3 mm in length, 4.1 mm in width, and 1.5 mm in height, it ensures easy integration into high-density circuit boards.
Common applications include industrial automation, automotive electronics, power management systems, and consumer electronic devices where reliable switching and voltage control are critical. Its surface-mount package facilitates automated assembly, increasing production efficiency.
Compact 8-pin SOP package offers surface mount capability. Maximum power dissipation of 2.5 W supports robust operation. Operating temperature ranges from -55°C up to 150°C for reliability. Low typical gate charge of 13.7 nC enables high-speed switching.
Maximum drain-source resistance of 65 mΩ ensures low conduction losses. Supports gate-source voltages from -20 V to +20 V. Complies with automotive standard AEC-Q101 for automotive applications. Dimensions are compact: length 5.3 mm, width 4.1 mm, height 1.5 mm for space-saving designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 A.
The maximum drain-source voltage is 30 V.
The typical gate charge is 13.7 nC, enabling high-speed switching.
The dimensions of the DMP3056LSS-13 are 5.3 mm in length, 4.1 mm in width, and 1.5 mm in height.
The maximum power dissipation rating is 2.5 W.
The operating temperature range is from -55°C to 150°C.
It comes in a compact 8-pin SOP surface-mount package.
This model complies with the automotive standard AEC-Q101.
The maximum drain-source resistance is 65 mΩ, which helps in reducing conduction losses.
It supports gate-source voltages from -20 V to +20 V.
Common applications include industrial automation, automotive electronics, power management systems, and consumer electronic devices.
The channel type is P-Channel Enhancement.
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