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DiodesZetex P-Channel MOSFET 5.2 A 12 V Enhancement Mode 3-Pin SOT-23 Package DMP1045U-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMP1045U-7
Width 1.4mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 5.2A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 75mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.3W
Typical Gate Charge Qg @ Vgs 15.8nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • Operates in enhancement mode typical for power MOSFET applications.
  • Maximum drain-source resistance of 75 milliohms ensures efficient conduction.
  • Maximum power dissipation rating of 1.3 W supports moderate power handling.
  • Wide operating temperature range from -55°C to 150°C for reliability in various environments.
  • Rated gate-source voltage of -8 V to +8 V allows stable control voltage range.
  • Typical gate charge of 15.8 nC enables fast switching performance.
  • Forward voltage of -1.2 V suited for low voltage circuits.
  • Certified to automotive standard AEC-Q101 for automotive electronics applications.

Product Description

DiodesZetex DMP1045U-7 is a P-Channel MOSFET transistor designed for surface mount applications requiring efficient switching and power management. It operates in enhancement mode with a maximum continuous drain current of 5.2 A and drain-source voltage rating of 12 V.

This device is housed in a compact SOT-23 package with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height, optimized for PCB space-saving and thermal management.

Featuring a low typical drain-source resistance of 75 milliohms, the MOSFET delivers low conduction losses, making it suitable for power efficient electronic circuit designs. The device supports a maximum power dissipation of 1.3 W, suitable for moderate power applications in automotive, industrial, and consumer electronics industries.

The operating temperature range from -55°C to 150°C ensures reliable performance in harsh environments. The gate-source voltage rating from -8 V to +8 V with typical gate charge of 15.8 nC supports fast switching speeds for efficient control in power management circuits.

The forward voltage of -1.2 V allows for effective operation in low voltage DC circuits. Additionally, compliance with the automotive AEC-Q101 standard confirms suitability for automotive electronic applications requiring robust performance standards.

Manufactured in China, this high-quality MOSFET is ideal for integration into various semiconductor and discrete component applications in electronics manufacturing, industrial devices, automotive systems, and power management solutions.

Operates in enhancement mode suitable for power switching applications. Compact SOT-23 surface mount package with small footprint dimensions. High maximum continuous drain current of 5.2 A ensures effective load handling.

Low resistance reduces conduction losses improving efficiency. Wide temperature tolerance supports industrial and automotive environments. Fast switching with low gate charge enhances performance. Compliance with automotive AEC-Q101 certification for quality assurance.

Robust gate voltage rating allows flexible circuit design. Suitable for power and signal switching circuits in electronics industry. Manufactured under strict quality controls in China. Explore more high-performance MOSFETs and discrete semiconductor components at EnvMart for advanced electronic design and manufacturing needs.

DiodesZetex P-Channel MOSFET 5.2 A 12 V Enhancement Mode 3-Pin SOT-23 Package DMP1045U-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.2 A.

The maximum drain-source voltage rating is 12 V.

The typical gate charge is 15.8 nC, which enables fast switching performance.

The SOT-23 package has dimensions of 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The operating temperature range is from -55°C to 150°C.

The maximum power dissipation rating for this model is 1.3 W.

The maximum gate-source voltage is rated at -8 V to +8 V.

It is certified to the automotive standard AEC-Q101.

This model has a P-channel type.

The maximum drain-source resistance is 75 milliohms.

It is suitable for power switching applications in automotive, industrial, and consumer electronics.

The forward voltage is -1.2 V, making it suitable for low voltage circuits.

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