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DiodesZetex N-Channel Enhancement MOSFET 4.2 A 20 V 3-Pin SOT-23 DMG2302U-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMG2302U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMG2302U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 800mW |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 4.2 A ensures robust performance under load.
- Operates reliably at maximum drain-source voltage of 20 V.
- Packaged in a compact 3-Pin SOT-23 surface mount package.
- Enhancement mode device with low maximum drain-source resistance of 120 mΩ.
- Supports high power dissipation up to 800 mW for demanding applications.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 7 nC at rated gate-source voltage for efficient switching.
- Meets automotive standard AEC-Q101, suitable for automotive electronics.
Product Description
DiodesZetex DMG2302U-7 is a high-performance N-Channel Enhancement-mode MOSFET designed for efficient switching and amplification in electronic circuits. This transistor features a maximum continuous drain current of 4.2 A, supporting moderate power loads with excellent thermal and electrical stability.
Its compact SOT-23 package includes 3 terminals allowing for surface mounting on PCBs, promoting space-saving designs especially in compact or mobile electronic devices. The MOSFET has a maximum drain-source voltage of 20 V and a low on-resistance of 120 mΩ, enabling low power loss and high efficiency in power management applications.
The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments. It complies with the automotive standard AEC-Q101, guaranteeing durability and reliability in automotive electrical systems. The typical gate charge of 7 nC enables fast switching with minimal power dissipation during operation.
This MOSFET is ideal for use in various sectors including industrial control systems, automotive electronics, power supplies, and general-purpose electronic designs where compact size and performance efficiency are critical.
Maximum continuous drain current of 4.2 A provides sustained current handling. Maximum drain-source voltage of 20 V suits low-voltage circuit designs. SOT-23 surface mount package enables high-density board layouts. Enhancement mode operation enhances switch performance and efficiency.
Low on-resistance of 120 mΩ reduces conduction losses. High power dissipation rating of 800 mW supports hotter conditions. Thermal tolerance between -55°C and 150°C ensures flexibility. Automotive grade AEC-Q101 certifies quality for vehicle electronics.
Package dimensions measure approximately 3 mm length, 1.4 mm width, and 1 mm height. Explore more industrial-grade MOSFETs and electronic components at EnvMart to find solutions tailored to your project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.2 A, allowing it to handle moderate power loads effectively.
It operates reliably at a maximum drain-source voltage of 20 V, suitable for low-voltage circuit designs.
This model is packaged in a compact 3-Pin SOT-23 surface mount package, promoting high-density board layouts.
The DMG2302U-7 features a low maximum drain-source resistance of 120 mΩ, which helps reduce conduction losses.
The typical gate charge at the rated gate-source voltage is 7 nC, enabling efficient switching with minimal power dissipation.
It has a wide operating temperature range from -55°C to 150°C, making it suitable for harsh environments.
The device meets the automotive standard AEC-Q101, ensuring its reliability in automotive electronics applications.
The package dimensions are approximately 3 mm in length, 1.4 mm in width, and 1 mm in height.
It supports a maximum power dissipation of 800 mW, suitable for demanding applications.
This model features an N-channel enhancement mode, which enhances switch performance and efficiency.
The MOSFET has a pin count of 3, which is typical for its SOT-23 package design.
The maximum gate-source voltage is -8 V to +8 V, allowing for flexible circuit designs.
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