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Infineon SIPMOS Type P-Channel MOSFET 9.7 A 60 V Enhancement Mode 3-Pin TO-252 SPD09P06PLGBTMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | SPD09P06PLGBTMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.7A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- This MOSFET operates in enhancement mode for efficient switching performance.
- Maximum power dissipation is rated at 42 W for optimal thermal handling.
- The device supports a maximum gate source voltage of -20 V to +20 V.
- Typical gate charge is low at 14 nC, improving switching speed and efficiency.
- Designed for surface mount applications with a compact TO-252 package type.
- Continuous operation temperature ranges from -55°C up to 175°C for reliability in harsh environments.
- The MOSFET features an automotive standard qualification of AEC-Q101 for automotive-grade performance.
- Forward voltage is approximately -1.1 V ensuring consistent conductivity.
Product Description
Infineon SPD09P06PLGBTMA1 SIPMOS Type P-Channel MOSFET is a high-quality discrete semiconductor device designed for power management in electronic and automotive applications. With a maximum continuous drain current of 9.7 A and a drain source voltage rating of 60 V, this enhancement mode MOSFET delivers efficient switching and conduction in a compact 3-pin TO-252 surface mount package.
This MOSFET supports a broad operating temperature range from -55°C to 175°C, making it suitable for demanding environments including automotive and industrial use. The device’s low typical gate charge of 14 nC enables fast switching, reducing power losses and improving overall circuit efficiency.
The device meets the AEC-Q101 automotive standard, assuring reliability and robustness for automotive electronic systems. Its maximum power dissipation of 42 W allows effective dissipation of heat during operation, enhancing durability.
Mechanical dimensions of 6.73 mm length, 6.22 mm width, and 2.41 mm height ensure compatibility with tight PCB layouts. The specified maximum gate source voltage of -20 V to +20 V provides design flexibility for various gate drive circuits.
Infineon’s SIPMOS P-Channel MOSFET series combines advanced semiconductor technology for applications in telecommunications, e-mobility solutions, DC/DC converters, automotive power management, and general switched-mode power supplies.
This MOSFET operates in enhancement mode for efficient switching performance. Maximum power dissipation is rated at 42 W for optimal thermal handling. The device supports a maximum gate source voltage of -20 V to +20 V. Typical gate charge is low at 14 nC, improving switching speed and efficiency.
Designed for surface mount applications with a compact TO-252 package type. Continuous operation temperature ranges from -55°C up to 175°C for reliability in harsh environments. Automotive standard qualification: AEC-Q101.
Compact dimensions facilitate high density PCB assemblies. Reliable forward voltage of approximately -1.1 V ensures consistent conduction.
Ideal for use in industrial, automotive, telecommunications, and power supply systems requiring P-Channel MOSFETs with excellent performance characteristics and automotive certification. Browse more MOSFET components and Infineon products on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.7 A.
This MOSFET has a maximum drain source voltage rating of 60 V.
It is designed in a TO-252 package type for surface mounting applications.
The typical gate charge is low at 14 nC, which enhances switching speed and efficiency.
The continuous operating temperature ranges from -55°C to 175°C, making it suitable for harsh environments.
The maximum power dissipation for this model is rated at 42 W.
The forward voltage is approximately -1.1 V, ensuring consistent conductivity.
It meets the AEC-Q101 automotive standard for reliability in automotive applications.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The model supports a maximum gate source voltage of -20 V to +20 V.
This model features a Type P channel, operating in enhancement mode.
It is suitable for applications in automotive power management, telecommunications, and DC/DC converters.
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