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DiodesZetex Isolated Dual Type N and Type P-Channel Power MOSFET, 5.2 A, 20 V, Enhancement Mode, 6-Pin TSOT DMC2038LVT-7

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 0.9mm
Length 2.95mm
Model DMC2038LVT-7
Width 1.65mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type TSOT
Minimum Operating Temperature -55°C
Standards/Approvals UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101, RoHS
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type N, Type P
Maximum Continuous Drain Current Id 5.2A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 168mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.1W
Typical Gate Charge Qg @ Vgs 5.7nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 1.1V
Transistor Configuration Isolated

Key Features

  • Maximum continuous drain current of 5.2 A ensures reliable power handling.
  • Drain-source voltage rating of 20 V suitable for various low voltage circuits.
  • Compact 6-pin TSOT surface mount package perfect for space-constrained designs.
  • Enhancement mode operation for efficient switching performance.
  • Dual transistor configuration providing isolated N and P-channel elements.
  • Maximum power dissipation of 1.1 W enabling effective thermal management.
  • Wide operating temperature range from -55°C to +150°C for robust application use.
  • Compliance with automotive AEC-Q101 standard guarantees quality and reliability.

Product Description

DiodesZetex DMC2038LVT-7 is an isolated dual power MOSFET consisting of both type N and type P-channel transistors in a compact 6-pin TSOT package. This semiconductor device delivers a maximum continuous drain current of 5.2 A and a drain-source voltage of 20 V, making it suitable for low-voltage power switching and amplification tasks in automotive and industrial electronics.

The enhancement mode channel operation optimizes switching speed and efficiency while minimizing power loss. Its isolated transistor configuration allows independent control of the N and P-channel elements, enabling flexible circuit design options. The device supports a maximum power dissipation of 1.1 W ensuring stable performance under thermal stress.

Designed to operate reliably across a wide temperature range from -55°C to +150°C, the MOSFET adheres to stringent automotive standards such as AEC-Q101, alongside certifications including UL 94V-0 fire safety, J-STD-020 lead-free compliance, MIL-STD-202, and RoHS environmental standards.

The small footprint dimensions of 2.95mm length, 1.65mm width, and 0.9mm height make this MOSFET an excellent choice for compact electronic assemblies requiring efficient power management. Typical applications include automotive electronics, power supplies, and industrial control systems.

Overall, this dual N and P-channel isolated MOSFET provides a reliable, efficient, and certified solution for power semiconductor needs in demanding industrial and automotive environments.

Maximum continuous drain current of 5.2 A ensures reliable power handling. Drain-source voltage rating of 20 V suitable for various low voltage circuits. Compact 6-pin TSOT surface mount package perfect for space-constrained designs.

Enhancement mode operation for efficient switching performance. Dual transistor configuration providing isolated N and P-channel elements. Maximum power dissipation of 1.1 W enabling effective thermal management. Wide operating temperature range from -55°C to +150°C for robust application use.

Compliance with automotive AEC-Q101 standard guarantees quality and reliability. Industry approvals include UL 94V-0, J-STD-020, MIL-STD-202, and RoHS compliance. Small dimensions (2.95mm x 1.65mm x 0.9mm) contribute to compact PCB design.

Explore more Power MOSFET devices and components at EnvMart for industrial, automotive, and electronic manufacturing applications.

DiodesZetex Isolated Dual Type N and Type P-Channel Power MOSFET, 5.2 A, 20 V, Enhancement Mode, 6-Pin TSOT DMC2038LVT-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 5.2 A, ensuring reliable power handling in various applications.

This MOSFET has a drain-source voltage rating of 20 V, making it suitable for low voltage circuits.

The dimensions of the TSOT package are 2.95 mm in length, 1.65 mm in width, and 0.9 mm in height, making it compact for space-constrained designs.

The maximum power dissipation for this MOSFET is 1.1 W, allowing for effective thermal management during operation.

It operates reliably across a wide temperature range from -55°C to +150°C, suitable for various environments.

This model features a dual transistor configuration with isolated N-channel and P-channel elements, allowing for independent control.

It complies with automotive AEC-Q101 standards and has additional approvals including UL 94V-0, J-STD-020, MIL-STD-202, and RoHS.

The maximum gate-source voltage for this MOSFET is -12V to +12V, allowing for flexible circuit designs.

The typical gate charge at Vgs is 5.7 nC, which contributes to its efficient switching performance.

The maximum drain-source resistance is 168 mΩ, which helps in minimizing power loss during operation.

This power MOSFET is suitable for applications in automotive electronics, power supplies, and industrial control systems.

The DMC2038LVT-7 features a 6-pin configuration, suitable for surface mount applications.

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