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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 0.9mm |
| Length | 2.95mm |
| Model | DMC2038LVT-7 |
| Width | 1.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TSOT |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, J-STD-020, MIL-STD-202, AEC-Q101, RoHS |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 168mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.1W |
| Typical Gate Charge Qg @ Vgs | 5.7nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.1V |
| Transistor Configuration | Isolated |
DiodesZetex DMC2038LVT-7 is an isolated dual power MOSFET consisting of both type N and type P-channel transistors in a compact 6-pin TSOT package. This semiconductor device delivers a maximum continuous drain current of 5.2 A and a drain-source voltage of 20 V, making it suitable for low-voltage power switching and amplification tasks in automotive and industrial electronics.
The enhancement mode channel operation optimizes switching speed and efficiency while minimizing power loss. Its isolated transistor configuration allows independent control of the N and P-channel elements, enabling flexible circuit design options. The device supports a maximum power dissipation of 1.1 W ensuring stable performance under thermal stress.
Designed to operate reliably across a wide temperature range from -55°C to +150°C, the MOSFET adheres to stringent automotive standards such as AEC-Q101, alongside certifications including UL 94V-0 fire safety, J-STD-020 lead-free compliance, MIL-STD-202, and RoHS environmental standards.
The small footprint dimensions of 2.95mm length, 1.65mm width, and 0.9mm height make this MOSFET an excellent choice for compact electronic assemblies requiring efficient power management. Typical applications include automotive electronics, power supplies, and industrial control systems.
Overall, this dual N and P-channel isolated MOSFET provides a reliable, efficient, and certified solution for power semiconductor needs in demanding industrial and automotive environments.
Maximum continuous drain current of 5.2 A ensures reliable power handling. Drain-source voltage rating of 20 V suitable for various low voltage circuits. Compact 6-pin TSOT surface mount package perfect for space-constrained designs.
Enhancement mode operation for efficient switching performance. Dual transistor configuration providing isolated N and P-channel elements. Maximum power dissipation of 1.1 W enabling effective thermal management. Wide operating temperature range from -55°C to +150°C for robust application use.
Compliance with automotive AEC-Q101 standard guarantees quality and reliability. Industry approvals include UL 94V-0, J-STD-020, MIL-STD-202, and RoHS compliance. Small dimensions (2.95mm x 1.65mm x 0.9mm) contribute to compact PCB design.
Explore more Power MOSFET devices and components at EnvMart for industrial, automotive, and electronic manufacturing applications.
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