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Vishay P-Channel Enhancement Mode MOSFET, 30 V, 9.6 A, 27.8 W, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.07mm |
| Length | 3.15mm |
| Model | SI7121DN-T1-GE3 |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | Si7121DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -50°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 27.8W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features an 8-pin PowerPAK 1212 package optimized for surface mounting.
- Offers low drain-source resistance of 26 milliohms for efficient operation.
- Maximum power dissipation of 27.8 watts supporting high-performance applications.
- Operational temperature ranges from -50°C minimum to 150°C maximum.
- Gate charge is 33 nanocoulombs at Vgs for swift switching.
- Designed for enhancement mode channel operation in electronic semiconductor devices.
Product Description
Vishay SI7121DN-T1-GE3 is a P-Channel Enhancement Mode MOSFET designed for use in electronic and power semiconductor applications. It features a maximum continuous drain current of 9.6 A and a maximum drain-source voltage of 30 V, making it suitable for efficient switching and power management tasks.
The device is housed in a surface-mount 8-pin PowerPAK 1212 package, facilitating compact PCB design and thermal management. With a low maximum drain-source resistance of 26 milliohms, the MOSFET ensures minimal conduction losses, improving overall efficiency.
This MOSFET supports a maximum power dissipation of 27.8 W and operates reliably across a wide temperature range from -50°C to 150°C, accommodating demanding industrial and automotive environments.
The typical gate charge is 33 nanocoulombs at gate-source voltage, allowing rapid switching capabilities. It tolerates gate-source voltages between -25 V and +25 V, providing robustness against voltage spikes.
Its physical dimensions are compact, measuring 3.15 mm in length and width, and 1.07 mm in height, enabling dense placement in sophisticated electronic assemblies.
Applications include power management in industrial equipment, automotive electronics, and general-purpose switching in electronic circuits where a high-performance P-Channel MOSFET is required.
Features an 8-pin PowerPAK 1212 package optimized for surface mounting. Offers low drain-source resistance of 26 milliohms for efficient operation. Maximum power dissipation of 27.8 watts supporting high-performance applications.
Operational temperature ranges from -50°C minimum to 150°C maximum. Gate charge is 33 nanocoulombs at Vgs for swift switching. Voltage tolerance up to ±25 V on gate source voltage. Compact dimensions: 3.15 mm length, 3.15 mm width, and 1.07 mm height.
Designed for enhancement mode channel operation in electronic semiconductor devices.
This product is ideal for use in industrial electronics, power conversion systems, and automotive manufacturing. Explore more Vishay Semiconductor products and related MOSFET components on EnvMart.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.6 A.
It can handle a maximum drain-source voltage of 30 V.
This MOSFET supports a maximum power dissipation of 27.8 W.
The dimensions are 3.15 mm in length, 3.15 mm in width, and 1.07 mm in height.
The typical gate charge is 33 nanocoulombs at the specified gate-source voltage.
It operates reliably across a temperature range from -50°C to 150°C.
The maximum gate-source voltage it can tolerate is ±25 V.
This model is designed for surface mounting.
The maximum drain-source resistance is 26 milliohms.
It utilizes a P-channel enhancement mode.
It is suitable for power management in industrial equipment, automotive electronics, and general-purpose switching in electronic circuits.
The forward voltage is 1.2 V.
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