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onsemi Isolated Dual N-Channel Power MOSFET 60 V 300 mA Enhancement Mode 6-Pin SC-88 NTJD5121NT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model NTJD5121NT1G
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 300mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 2.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 266mW
Typical Gate Charge Qg @ Vgs 0.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.8V
Transistor Configuration Isolated

Key Features

  • Features enhancement mode channel configuration for controlled switching performance.
  • Maximum power dissipation is 266 mW ensuring reliable operation in low power applications.
  • Operates reliably across a temperature range from -55°C to +150°C.
  • Low typical gate charge of 0.9 nC resulting in high efficiency switching.
  • Includes automotive standard AEC-Q101 compliance for high reliability in automotive applications.
  • Compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height optimize board space.
  • Isolated transistor configuration with dual N-channel elements per chip enhances circuit integration.
  • Surface mount mount type providing compatibility with modern PCB assembly processes.

Product Description

onsemi NTJD5121NT1G is a dual N-channel isolated power MOSFET designed specifically for efficient and reliable switching in electronic circuits. It has a maximum continuous drain current of 300 mA and a maximum drain-source voltage rating of 60 V, making it suitable for low power industrial, automotive, and consumer electronic applications.

This enhancement mode MOSFET comes in a compact 6-pin SC-88 surface mount package, measuring just 2.2 mm in length, 1.35 mm in width, and 1 mm in height. It supports high operating temperatures from -55°C up to +150°C, ensuring durability under harsh environmental conditions.

The device features a low typical gate charge of 0.9 nC at Vgs, facilitating efficient switching and reducing gate drive losses. The maximum power dissipation is 266 mW, which suits usage in compact and energy-efficient electronic systems.

It is compliant with the automotive AEC-Q101 standard, guaranteeing the robustness needed for automotive electronics. The transistor configuration is isolated dual N-channel, incorporating two elements per chip to optimize space and functionality in design layouts.

The MOSFET offers a gate-source voltage range of ±20 V and a forward voltage of 0.8 V, providing robust and predictable switching characteristics. Its surface mount design enables easy integration into PCBs using modern assembly techniques.

Enhancement mode dual N-channel MOSFET for controlled switching. 300 mA continuous drain current and 60 V drain-source voltage rating. Compact 6-pin SC-88 surface mount package. Automotive standard compliant for high reliability.

Wide operating temperature range from -55°C to +150°C. Low typical gate charge for efficient switching. Maximum power dissipation of 266 mW for low power applications. Isolated transistor configuration with two elements per chip.

Robust gate-source voltage and forward voltage characteristics. Ideal for industrial, automotive, and consumer electronic sectors.

This NTJD5121NT1G Power MOSFET by onsemi is an excellent choice for designers needing a reliable, high-performance MOSFET transistor with compact sizing and automotive-grade quality. For more options and detailed electronic components, explore the Electronics & Electricals section on EnvMart for quality power semiconductor devices and related components.

onsemi Isolated Dual N-Channel Power MOSFET 60 V 300 mA Enhancement Mode 6-Pin SC-88 NTJD5121NT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 300 mA.

It has a maximum drain-source voltage rating of 60 V.

The SC-88 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

This model operates reliably across a temperature range from -55°C to +150°C.

The typical gate charge is 0.9 nC at Vgs.

The maximum power dissipation is 266 mW.

Yes, it is compliant with the automotive AEC-Q101 standard for high reliability in automotive applications.

It features an isolated dual N-channel transistor configuration, incorporating two elements per chip.

The maximum gate-source voltage is ±20 V.

This model supports surface mount type, compatible with modern PCB assembly processes.

The forward voltage is 0.8 V.

The SC-88 package has a pin count of 6.

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